The electron drift in germanium detectors is modeled making many assumptions. Confronted with data, these assumptions have to be revisited. The temperature dependence of the drift of electrons was studied in detail for an n-type segmented point-contact germanium detector. The detector was mounted in a temperature controlled, electrically cooled cryostat. Surface events were induced with collimated 81 keV photons from a $^{133}$Ba source. A detailed analysis of the rise time of pulses collected in surface scans, performed at different temperatures, is presented. The longitudinal anisotropy of the electron drift decreases with rising temperature. A new approach, making use of designated rise-time windows determined by simulations using SolidS...
A study is made of the temperature dependence of the lattice scattering mobility of electrons in ger...
In order to overcome the energy barrier of 20 keV X-rays, only high-Z materials can provide suffici...
International audienceA magnetic field of a few gauss produces sizeable effects on carrier trans-por...
The drift velocity of electrons in n-type germanium has been measured as a function of applied elect...
International audienceImproving upon the present background rejection capabilities of the cryogenic ...
International audienceAnisotropy effects in hot carrier transport have been investigated in germaniu...
A new set of experimental data is presented for the mean drift lengths and the drift velocities of h...
Germanium is commonly suggested as an alternative for power electronic devices in emerging liquid hy...
The velocity laws of electrons and holes in germanium single crystals at millikelvin temperatures ar...
This research was sponsored by the National Science Foundation Grant NSF PHY-931478
International audienceEDI measures the drift velocity of artificially injected electron beams. From ...
Excited electrons in the conduction band of germanium collect into four energy minima, or valleys, i...
The drift velocity of electrons in silicon at high electric fields is measured in the direction ove...
Gamma ray tracking in future HPGe arrays like AGATA will rely on pulse shape analysis (PSA) of multi...
tors er, i ed d ts ca due variation in the drift time even amongst events that occur at the same dep...
A study is made of the temperature dependence of the lattice scattering mobility of electrons in ger...
In order to overcome the energy barrier of 20 keV X-rays, only high-Z materials can provide suffici...
International audienceA magnetic field of a few gauss produces sizeable effects on carrier trans-por...
The drift velocity of electrons in n-type germanium has been measured as a function of applied elect...
International audienceImproving upon the present background rejection capabilities of the cryogenic ...
International audienceAnisotropy effects in hot carrier transport have been investigated in germaniu...
A new set of experimental data is presented for the mean drift lengths and the drift velocities of h...
Germanium is commonly suggested as an alternative for power electronic devices in emerging liquid hy...
The velocity laws of electrons and holes in germanium single crystals at millikelvin temperatures ar...
This research was sponsored by the National Science Foundation Grant NSF PHY-931478
International audienceEDI measures the drift velocity of artificially injected electron beams. From ...
Excited electrons in the conduction band of germanium collect into four energy minima, or valleys, i...
The drift velocity of electrons in silicon at high electric fields is measured in the direction ove...
Gamma ray tracking in future HPGe arrays like AGATA will rely on pulse shape analysis (PSA) of multi...
tors er, i ed d ts ca due variation in the drift time even amongst events that occur at the same dep...
A study is made of the temperature dependence of the lattice scattering mobility of electrons in ger...
In order to overcome the energy barrier of 20 keV X-rays, only high-Z materials can provide suffici...
International audienceA magnetic field of a few gauss produces sizeable effects on carrier trans-por...