Magnetron sputtering of transparent conducting tungsten doped indium oxide

In thin film solar cells there is a front contact layer called TCO, transparent conducting oxide. This layer requires high conductivity and high transmittance. Different materials such as Tin doped indium oxide (ITO) and Aluminum doped zinc oxide (AZO) are current good alternatives but several other materials are investigated to find even better materials. One of them is tungsten doped indium oxide (IOW). This project was about investigating the deposition process for IOW and characterize the properties of IOW thin film to investigate the possibilities for implementing this material as a contact layer in thin film solar cells. The results from the two batches of depositions varied a lot. Some samples came out dark, but some were transparent and had a high transmittance, suitable for a TCO. The highest transmittance reached through this process was around 95 % in the infrared (IR) range and around 90 % in the visible range. When it comes to the resistivity, no IOW-samples reaches desired levels for a TCO. The lowest resistivity reached was 6.36 * 10-4 W cm. The results showed that the sample with the lowest resistivity was the undoped material, which is contradicting the current theory on the subject. The lowest resistivity for the IOW film was 6.50 * 10-3 W cm.