We report 77 K Photoluminescence (PL) and Photoluminescence Excitation (PLE) spectroscopies of Er ions incorporated with Fe in oxidized porous silicon (OPS) in the form of 5–50 nm sized clusters containing Fe, O, and Er. Twenty sharp (FWHM of about 0.4 meV) PL s peaks related to the transitions between highly split levels of 4I13/2 and 4I15/2 multiplets were observed. Two different Er centers having cubic and lower than cubic symmetries were identified. The photoluminescence excitation spectrum of the 1533 nm PL peak comprises no resonant features but a broad band spanning from 300 to 570 nm. The mechanism of excitation of Er ions through Fe : O : Er nanoclusters in the OPS host is presented
Two different oxidized porous silicon samples were saturated with lantanum oxysulfide luminophors do...
Optical properties of directly excited erbium (Er3+) ions have been studied in silicon rich silicon ...
We demonstrate that excitation of Er3+ ions embedded in crystalline silicon is effectively quenched ...
In the present work, photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopy were...
Er clustering plays a major role in hindering sufficient optical gain in Er-doped Si materials. For ...
International audiencePorous silicon (PS) is doped with erbium by electrochemical anodisation. The p...
Er clustering plays a major role in hindering sufficient optical gain in Er-doped Si materials. For ...
We have investigated the role of the Si excess on the photoluminescence properties of Er doped subst...
Optical properties of directly excited erbium (Er(3+)) ions have been studied in silicon rich silico...
The luminescence of amorphous silicon layers either implanted with Er or co-implanted with Er and O ...
International audienceEr-doped silica or rich-silicon oxide has been widely studied as 1.54 mm emitt...
Silicon-rich silica samples doped with erbium were grown by PECVD and characterized by photoluminesc...
Ce travail de thèse porte sur la photoluminescence (PL) de l’erbium à 1,54 µm dans deux systèmes con...
Photoluminescence (PL) and time-resolved PL experiments as a function of the elaboration process are...
Excitation of the intra-4f-shell luminescence near 1.5μm in silicon-rich silicon oxide is studied. S...
Two different oxidized porous silicon samples were saturated with lantanum oxysulfide luminophors do...
Optical properties of directly excited erbium (Er3+) ions have been studied in silicon rich silicon ...
We demonstrate that excitation of Er3+ ions embedded in crystalline silicon is effectively quenched ...
In the present work, photoluminescence (PL) and photoluminescence excitation (PLE) spectroscopy were...
Er clustering plays a major role in hindering sufficient optical gain in Er-doped Si materials. For ...
International audiencePorous silicon (PS) is doped with erbium by electrochemical anodisation. The p...
Er clustering plays a major role in hindering sufficient optical gain in Er-doped Si materials. For ...
We have investigated the role of the Si excess on the photoluminescence properties of Er doped subst...
Optical properties of directly excited erbium (Er(3+)) ions have been studied in silicon rich silico...
The luminescence of amorphous silicon layers either implanted with Er or co-implanted with Er and O ...
International audienceEr-doped silica or rich-silicon oxide has been widely studied as 1.54 mm emitt...
Silicon-rich silica samples doped with erbium were grown by PECVD and characterized by photoluminesc...
Ce travail de thèse porte sur la photoluminescence (PL) de l’erbium à 1,54 µm dans deux systèmes con...
Photoluminescence (PL) and time-resolved PL experiments as a function of the elaboration process are...
Excitation of the intra-4f-shell luminescence near 1.5μm in silicon-rich silicon oxide is studied. S...
Two different oxidized porous silicon samples were saturated with lantanum oxysulfide luminophors do...
Optical properties of directly excited erbium (Er3+) ions have been studied in silicon rich silicon ...
We demonstrate that excitation of Er3+ ions embedded in crystalline silicon is effectively quenched ...