Activation of electrical carriers in Zn-implanted InP by low-power pulsed-laser annealing

Low-power pulsed-laser annealing was applied to Zn1-implanted InP samples. In order to avoid surface oxidation during the treatment, the laser irradiation was carried out in inert ambient of nitrogen at different pressures. The analytical techniques used include Rutherford backscattering spectroscopy, reflection high energy electron diffraction, and electrical measurements. The highest carrier activation, about 80%, was achieved at the same laser power density (6.5 MW/cm2) at which the best crystal recovery was obtained