Low-Power Pulsed-Laser Annealing (LPPLA) has been applied to Zn-implanted InP samples kept in a controlled atmosphere (Ar or N-2). The chemical properties of the used gas play a crucial role to give rise to the electrical carrier activation (about 80%) of the processed InP. (C) 1998 Elsevier Science Ltd. All rights reserved
During the process of elaboration of n+ /p InP photodiodes for solar energy conversion, we have obse...
The passivation of zinc acceptors in an InP layer after reactive ion etching (RIE) using CH4/H2 has ...
The electrical and optical behaviour of halogen-lamp-annealed InP(Fe) implanted with 30 and 70 keV 2...
The e!ects of N2 annealing atmosphere on implanted and low-power pulsed-laser annealed (LPPLA) InP ...
Low-power pulsed-laser annealing was applied to Zn+-implanted InP samples. In order to avoid surface...
In this paper we report a first attempt to apply the low power pulsed-laser annealing (LPPLA) techni...
Low-power pulsed-laser annealing was applied to Zn1-implanted InP samples. In order to avoid surfac...
Low-power pulsed-laser annealing has been applied to Zn1-implanted InP samples in N2 atmosphere, att...
Semi-insulating InP samples have been implanted with Zn in order to obtain p-type films. The implant...
The effects of the ambient atmosphere in the annealing chamber on the electrical and structural char...
It has been recently established that the crystallinity of-ion-implanted GaAs samples can be restore...
Data on the effects of 140 keV Zn -implantation in 100 GaAs and the consequent low power pulsed lase...
It is very well known that the characteristics of GaAs render it promising to manufacture high speed...
Data on the effects of 140 keV Zn+ implanation of (100)GaAs and the consequent low-power pulsed lase...
Crystals of (100) GaAs implanted with Zn+-ions were treated by low-power pulsed-laser annealing (LPP...
During the process of elaboration of n+ /p InP photodiodes for solar energy conversion, we have obse...
The passivation of zinc acceptors in an InP layer after reactive ion etching (RIE) using CH4/H2 has ...
The electrical and optical behaviour of halogen-lamp-annealed InP(Fe) implanted with 30 and 70 keV 2...
The e!ects of N2 annealing atmosphere on implanted and low-power pulsed-laser annealed (LPPLA) InP ...
Low-power pulsed-laser annealing was applied to Zn+-implanted InP samples. In order to avoid surface...
In this paper we report a first attempt to apply the low power pulsed-laser annealing (LPPLA) techni...
Low-power pulsed-laser annealing was applied to Zn1-implanted InP samples. In order to avoid surfac...
Low-power pulsed-laser annealing has been applied to Zn1-implanted InP samples in N2 atmosphere, att...
Semi-insulating InP samples have been implanted with Zn in order to obtain p-type films. The implant...
The effects of the ambient atmosphere in the annealing chamber on the electrical and structural char...
It has been recently established that the crystallinity of-ion-implanted GaAs samples can be restore...
Data on the effects of 140 keV Zn -implantation in 100 GaAs and the consequent low power pulsed lase...
It is very well known that the characteristics of GaAs render it promising to manufacture high speed...
Data on the effects of 140 keV Zn+ implanation of (100)GaAs and the consequent low-power pulsed lase...
Crystals of (100) GaAs implanted with Zn+-ions were treated by low-power pulsed-laser annealing (LPP...
During the process of elaboration of n+ /p InP photodiodes for solar energy conversion, we have obse...
The passivation of zinc acceptors in an InP layer after reactive ion etching (RIE) using CH4/H2 has ...
The electrical and optical behaviour of halogen-lamp-annealed InP(Fe) implanted with 30 and 70 keV 2...
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