Electronic properties of (1xn)-reconstructed Bi/InSb(110) interfaces

Morphology and electronic structure of the (1x2)- and (1x3)-Bi/InSb(110) interfaces have been studied by electron-energy-loss and ultraviolet photoemission spectroscopies. The relative intensity of the Bi-0(4,5), In- and Sb-N-4,N-5 loss structures indicate a Bi coverage of 3/4 and 1/4 monolayer for the (1x2)- and (1x3)-reconstructed phases, respectively. Main Bi-induced filled electronic valence band states, and absorption between bonding and antibonding Bi-derived levels (at 0.5 eV) have been measured, which are peculiar of the reconstructed Bi structures