Radiation hardness tests were performed at the Frascati Neutron Generator on silicon Photo-Multipliers that were made of semiconductor photon detectors built from a square matrix of avalanche photodiodes on a silicon substrate. Several samples from different manufacturers have been irradiated, integrating up to 7 X 10(10) 1-MeV-equivalent neutrons per cm(2). Detector performance was recorded during the neutron irradiation, and a gradual deterioration of their properties began after an integrated fluence of the order of 10(8) 1-MeV-equivalent neutrons per cm(2) was reached. (C) 2010 Elsevier B.V. All rights reserved
Advancement in the development of semiconductor photodetectors have led to substitution Tube (PMT) ...
Abstract. Minimum energy of neutron to displace atoms in silicon crystals are equal to 200 eV. Due t...
The necessary long term operation of semiconductor devices in nuclear radiation fields is the reason...
We report radiation hardness tests performed at the Frascati Neutron Generator on silicon Photo-Mult...
We report radiation hardness tests performed, with a white neutron beam, at the Geel Electron LINear...
Silicon photo-multipliers, often called "SiPM", are semiconductor photon detectors built from a squa...
Available from TIB Hannover: RA 2999(92-003) / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Tech...
In this paper we present a study of the neutrons-induced damage in Silicon Photo-Multipliers. Twenty...
Radiation hardness is an important requirement for solid state readout devices operating in high rad...
The ways of increasing the radiation hardness of silicon were considered. It was then experimentally...
Radiation hardness of planar detectors processed from pre-irradiated and thermo-annealed n-type FZ s...
The radiation hardness of silicon microstrip detectors has been investigated on full-size prototypes...
Scintillator based neutron detectors are a prominent alternative to 3He based gas detectors traditio...
We shall review test results which show that silicon detectors can withstand at 130 K temperature a ...
Electron Linear Accelerators (linacs) used in radiotherapy treatments produce undesired photo-neutro...
Advancement in the development of semiconductor photodetectors have led to substitution Tube (PMT) ...
Abstract. Minimum energy of neutron to displace atoms in silicon crystals are equal to 200 eV. Due t...
The necessary long term operation of semiconductor devices in nuclear radiation fields is the reason...
We report radiation hardness tests performed at the Frascati Neutron Generator on silicon Photo-Mult...
We report radiation hardness tests performed, with a white neutron beam, at the Geel Electron LINear...
Silicon photo-multipliers, often called "SiPM", are semiconductor photon detectors built from a squa...
Available from TIB Hannover: RA 2999(92-003) / FIZ - Fachinformationszzentrum Karlsruhe / TIB - Tech...
In this paper we present a study of the neutrons-induced damage in Silicon Photo-Multipliers. Twenty...
Radiation hardness is an important requirement for solid state readout devices operating in high rad...
The ways of increasing the radiation hardness of silicon were considered. It was then experimentally...
Radiation hardness of planar detectors processed from pre-irradiated and thermo-annealed n-type FZ s...
The radiation hardness of silicon microstrip detectors has been investigated on full-size prototypes...
Scintillator based neutron detectors are a prominent alternative to 3He based gas detectors traditio...
We shall review test results which show that silicon detectors can withstand at 130 K temperature a ...
Electron Linear Accelerators (linacs) used in radiotherapy treatments produce undesired photo-neutro...
Advancement in the development of semiconductor photodetectors have led to substitution Tube (PMT) ...
Abstract. Minimum energy of neutron to displace atoms in silicon crystals are equal to 200 eV. Due t...
The necessary long term operation of semiconductor devices in nuclear radiation fields is the reason...