Charge accumulation in a current-injected device provides important information about the electrical properties of materials. Conventionally, local charge accumulation is measured by potential drops at multiple positions in the device using a voltage probe. Here, we report on direct observations of the spatial distribution of charge accumulation in semimetal WTe2 via the polarization rotation microscopy technique. The mappings of the polarization rotation of the reflected light show that the injected charge carriers accumulate near the transverse boundaries of the device. Our results demonstrate an optical method to visualize charge accumulation profiles of the electrically anisotropic medium.11Nsciescopu
The ability to make local measurements of charge density in nanoscale materials and devices is essen...
A novel method for mapping the charge density spatial distribution in organic field-effect transisto...
We use an electron holographic method to determine the charge distribution along a quasi-one-dimensi...
We report an optical thermometry technique using a polarization-sensitive laser scanning microscopy....
In organic field-effect transistors (OFETs), the morphological structure of the active layer is one ...
The morphology of the thin active layer is one of the main parameters that influence charge transpor...
Charge-to-spin conversion in various materials is the key for the fundamental understanding of spin-...
Structure–property relationships are of fundamental importance to develop quantitative models descri...
Band structures are vital in determining the electronic properties of materials. Recently, the two-d...
14 pages, 3 figures + supplementary materialRecently, much interest has emerged in fluid-like electr...
International audienceThis article is devoted first to anisotropic distributions of stored electric ...
Off-axis electron holography can be used to measure the electron-optical phase shift associated with...
Deep levels control the space charge in electrically compensated semi-insulating materials. They lim...
Nanoscale fabrication methods are generating ever smaller and more precise devices that exhibit exci...
Several groups have demonstrated the potential of the Pockels effect in Cadmium Zinc Telluride (CZT...
The ability to make local measurements of charge density in nanoscale materials and devices is essen...
A novel method for mapping the charge density spatial distribution in organic field-effect transisto...
We use an electron holographic method to determine the charge distribution along a quasi-one-dimensi...
We report an optical thermometry technique using a polarization-sensitive laser scanning microscopy....
In organic field-effect transistors (OFETs), the morphological structure of the active layer is one ...
The morphology of the thin active layer is one of the main parameters that influence charge transpor...
Charge-to-spin conversion in various materials is the key for the fundamental understanding of spin-...
Structure–property relationships are of fundamental importance to develop quantitative models descri...
Band structures are vital in determining the electronic properties of materials. Recently, the two-d...
14 pages, 3 figures + supplementary materialRecently, much interest has emerged in fluid-like electr...
International audienceThis article is devoted first to anisotropic distributions of stored electric ...
Off-axis electron holography can be used to measure the electron-optical phase shift associated with...
Deep levels control the space charge in electrically compensated semi-insulating materials. They lim...
Nanoscale fabrication methods are generating ever smaller and more precise devices that exhibit exci...
Several groups have demonstrated the potential of the Pockels effect in Cadmium Zinc Telluride (CZT...
The ability to make local measurements of charge density in nanoscale materials and devices is essen...
A novel method for mapping the charge density spatial distribution in organic field-effect transisto...
We use an electron holographic method to determine the charge distribution along a quasi-one-dimensi...