Add to ORKGWe present a method for tailoring a broadband and flat-topped emission spectrum in quantum dot superluminescent diodes based upon modification of the dots-in-compositionally-modulated-well (DCMWELL) technique. We demonstrate flat-topped emission with 95 nm full width at half maximum (FWHM), centred at 1 250 nm, and with output power in excess of 8 mW
The first demonstration, to our knowledge, of the creation of ultrabroadband superluminescent light-...
We have determined the growth conditions which result in a narrow linewidth and room temperature emi...
Superradiant emission pulses from a quantum-dot tapered device are generated on demand at repetition...
We present a method for tailoring a broadband and flat-topped emission spectrum in quantum dot super...
Ultra-wide bandwidth superluminescent diodes (SLDs) using multiple layers of InAs-GaAs quantum dots ...
Broadband superluminescent diodes incorporating multiple layers of InAs quantum dots (QDs), where th...
High-power broadband superluminescent diodes (SLDs) emitting in the 1.2-1.3-?m region are demonstrat...
We propose a novel superluminescent diode (SLD) with a quantum dot (QD) active layer, which should g...
The size dispersion of InAs quantum dots (QD) was optimized to broaden the photoluminescence (PL) sp...
High-power and broadband quantum-dot (QD) superluminescent light-emitting diodes are realized by usi...
An ultrawide-bandwidth, superluminescent light-emitting diode (SLED) utilizing multiple layers of do...
A superluminescent diode (SLED) using chirped multiple InAs quantum dot (QD) layers as the active re...
We report on Chemical Beam Epitaxy (CBE) growth of wavelength tunable InAs/GaAs quantum dots (QD) ba...
Broadband superluminescent diodes are fabricated by using InAs/GaAs self-assembled quantum dots as a...
This paper reports the fabrication of J-shaped bent-waveguide superluminescent diodes utilizing an I...
The first demonstration, to our knowledge, of the creation of ultrabroadband superluminescent light-...
We have determined the growth conditions which result in a narrow linewidth and room temperature emi...
Superradiant emission pulses from a quantum-dot tapered device are generated on demand at repetition...
We present a method for tailoring a broadband and flat-topped emission spectrum in quantum dot super...
Ultra-wide bandwidth superluminescent diodes (SLDs) using multiple layers of InAs-GaAs quantum dots ...
Broadband superluminescent diodes incorporating multiple layers of InAs quantum dots (QDs), where th...
High-power broadband superluminescent diodes (SLDs) emitting in the 1.2-1.3-?m region are demonstrat...
We propose a novel superluminescent diode (SLD) with a quantum dot (QD) active layer, which should g...
The size dispersion of InAs quantum dots (QD) was optimized to broaden the photoluminescence (PL) sp...
High-power and broadband quantum-dot (QD) superluminescent light-emitting diodes are realized by usi...
An ultrawide-bandwidth, superluminescent light-emitting diode (SLED) utilizing multiple layers of do...
A superluminescent diode (SLED) using chirped multiple InAs quantum dot (QD) layers as the active re...
We report on Chemical Beam Epitaxy (CBE) growth of wavelength tunable InAs/GaAs quantum dots (QD) ba...
Broadband superluminescent diodes are fabricated by using InAs/GaAs self-assembled quantum dots as a...
This paper reports the fabrication of J-shaped bent-waveguide superluminescent diodes utilizing an I...
The first demonstration, to our knowledge, of the creation of ultrabroadband superluminescent light-...
We have determined the growth conditions which result in a narrow linewidth and room temperature emi...
Superradiant emission pulses from a quantum-dot tapered device are generated on demand at repetition...