Deuterium (hydrogen) incorporation in dilute nitrides (e.g., GaAsN and GaPN) modifies dramatically the crystal's electronic and structural properties and represents a prominent example of defect engineering in semiconductors. However, the microscopic origin of D-related effects is still an experimentally unresolved issue. In this paper, we used nuclear reaction analyses and/or channeling, high resolution x-ray diffraction, photoluminescence, and x-ray absorption fine structure measurements to determine how the stoichiometric [D]/[N] ratio and the local structure of the N-D complexes parallel the evolution of the GaAsN electronic and strain properties upon irradiation and controlled removal of D. The experimental results provide the followin...
Hydrogen (or deuterium) incorporation in dilute nitride semiconductors modifies dramatically the ele...
Hydrogen or deuterium incorporation in dilute nitride semiconductors modifies dramatically the elect...
Hydrogen or deuterium incorporation in dilute nitride semiconductors modifies dramatically the elect...
Deuterium (hydrogen) incorporation in dilute nitrides (e.g., GaAsN and GaPN) modifies dramatically t...
Deuterium (hydrogen) incorporation in dilute nitrides (e.g., GaAsN and GaPN) modifies dramatically t...
Deuterium hydrogen incorporation in dilute nitrides e.g., GaAsN and GaPN modifies dramatically the c...
Deuterium (hydrogen) incorporation in dilute nitrides (e.g., GaAsN and GaPN) modifies dramatically t...
In this article we studied the thermal evolution of nitrogen-deuterium (N-D) complexes which form in...
By means of high resolution x-ray diffraction and photoluminescence measurements we demonstrate that...
Hydrogenation of GaAs1-xNx and GaP1-xNx epilayers grown on GaAs(001) and GaP(001) surfaces, respecti...
Hydrogenation of GaAs1?xNx and GaP1?xNx epilayers grown on GaAs(001) and GaP(001) surfaces, respecti...
By means of high resolution x-ray diffraction and photo luminescence measurements we demonstrate tha...
In dilute nitrides, such as GaAsN, hydrogen-induced passivation of the electronic activity of N atom...
We have investigated the structure of nitrogen-hydrogen complexes in GaAs1−yNy and InxGa1ͨ...
We have investigated the structure of nitrogen-hydrogen complexes in GaAs1−yNy and InxGa1ͨ...
Hydrogen (or deuterium) incorporation in dilute nitride semiconductors modifies dramatically the ele...
Hydrogen or deuterium incorporation in dilute nitride semiconductors modifies dramatically the elect...
Hydrogen or deuterium incorporation in dilute nitride semiconductors modifies dramatically the elect...
Deuterium (hydrogen) incorporation in dilute nitrides (e.g., GaAsN and GaPN) modifies dramatically t...
Deuterium (hydrogen) incorporation in dilute nitrides (e.g., GaAsN and GaPN) modifies dramatically t...
Deuterium hydrogen incorporation in dilute nitrides e.g., GaAsN and GaPN modifies dramatically the c...
Deuterium (hydrogen) incorporation in dilute nitrides (e.g., GaAsN and GaPN) modifies dramatically t...
In this article we studied the thermal evolution of nitrogen-deuterium (N-D) complexes which form in...
By means of high resolution x-ray diffraction and photoluminescence measurements we demonstrate that...
Hydrogenation of GaAs1-xNx and GaP1-xNx epilayers grown on GaAs(001) and GaP(001) surfaces, respecti...
Hydrogenation of GaAs1?xNx and GaP1?xNx epilayers grown on GaAs(001) and GaP(001) surfaces, respecti...
By means of high resolution x-ray diffraction and photo luminescence measurements we demonstrate tha...
In dilute nitrides, such as GaAsN, hydrogen-induced passivation of the electronic activity of N atom...
We have investigated the structure of nitrogen-hydrogen complexes in GaAs1−yNy and InxGa1ͨ...
We have investigated the structure of nitrogen-hydrogen complexes in GaAs1−yNy and InxGa1ͨ...
Hydrogen (or deuterium) incorporation in dilute nitride semiconductors modifies dramatically the ele...
Hydrogen or deuterium incorporation in dilute nitride semiconductors modifies dramatically the elect...
Hydrogen or deuterium incorporation in dilute nitride semiconductors modifies dramatically the elect...