The discovery of perpendicular magnetic anisotropy (PMA) at the interface of ferromagnetic ultra-thin films and MgO has stimulated a vast interest in developing high-density magnetic random-access memory. Whilst attempts have been made to understand the origin of interfacial PMA, difficulties in distinguishing contributions from the interface and bulk layers has hampered the understanding of such phenomena. In this study, we have investigated for the first time the electronic and magnetic properties of PMA in Fe ultra-thin films on MgO in an atomic-layer resolved fashion by employing depth-resolved synchrotron Mössbauer spectroscopy to get an insight into the physical mechanism of interfacial PMA.応用物理学会春季学術講演会202
Perpendicular magnetic anisotropy (PMA) is an essential condition for CoFe thin films used in magnet...
By systematically comparing the magnetic properties of the Ta/CoFeB/Ta and MgO/CoFeB/MgO structures ...
Perpendicular Magnetic Anisotropy (PMA) is a key requirement for state of the art Magnetic Random Ac...
International audienceSpin electronics is a rapidly expanding field stimulated by a strong synergy b...
International audienceSpin electronics is a rapidly expanding field stimulated by a strong synergy b...
International audienceSpin electronics is a rapidly expanding field stimulated by a strong synergy b...
Broadband ferromagnetic resonance is measured in single crystalline Fe films of varying thickness sa...
International audienceSpin-transfer-torque magnetic random access memory (STT-MRAM) attracts extensi...
International audienceSpin-transfer-torque magnetic random access memory (STT-MRAM) attracts extensi...
Electronic structure and magnetic anisotropy energy (MAE) of Cr-bufferedFe/MgO interface were invest...
Perpendicular magnetic anisotropy (PMA) is induced at the Fe/Au(111) interface. We examine the origi...
Perpendicular magnetic anisotropy (PMA) is an essential condition for CoFe thin films used in magnet...
Dissertation (Ph.D.) University of Alaska Fairbanks, 1998Ferromagnetic multilayers showing perpendic...
Interfacial aspects play an important role in the magnetic and structural properties of magnetic thi...
Interfacial aspects play an important role in the magnetic and structural properties of magnetic thi...
Perpendicular magnetic anisotropy (PMA) is an essential condition for CoFe thin films used in magnet...
By systematically comparing the magnetic properties of the Ta/CoFeB/Ta and MgO/CoFeB/MgO structures ...
Perpendicular Magnetic Anisotropy (PMA) is a key requirement for state of the art Magnetic Random Ac...
International audienceSpin electronics is a rapidly expanding field stimulated by a strong synergy b...
International audienceSpin electronics is a rapidly expanding field stimulated by a strong synergy b...
International audienceSpin electronics is a rapidly expanding field stimulated by a strong synergy b...
Broadband ferromagnetic resonance is measured in single crystalline Fe films of varying thickness sa...
International audienceSpin-transfer-torque magnetic random access memory (STT-MRAM) attracts extensi...
International audienceSpin-transfer-torque magnetic random access memory (STT-MRAM) attracts extensi...
Electronic structure and magnetic anisotropy energy (MAE) of Cr-bufferedFe/MgO interface were invest...
Perpendicular magnetic anisotropy (PMA) is induced at the Fe/Au(111) interface. We examine the origi...
Perpendicular magnetic anisotropy (PMA) is an essential condition for CoFe thin films used in magnet...
Dissertation (Ph.D.) University of Alaska Fairbanks, 1998Ferromagnetic multilayers showing perpendic...
Interfacial aspects play an important role in the magnetic and structural properties of magnetic thi...
Interfacial aspects play an important role in the magnetic and structural properties of magnetic thi...
Perpendicular magnetic anisotropy (PMA) is an essential condition for CoFe thin films used in magnet...
By systematically comparing the magnetic properties of the Ta/CoFeB/Ta and MgO/CoFeB/MgO structures ...
Perpendicular Magnetic Anisotropy (PMA) is a key requirement for state of the art Magnetic Random Ac...