M.Ing.The drive for smaller and higher density power supplies have been realised by advances in switching technologies, higher frequencies and smaller components. Along with the advances of higher switching frequencies, came a number of restrictive parasitic effects that were insignificant at lower frequencies (in use a few years ago). A problem that is becoming of increasing concern, as the frequencies increase, rise times decrease and current levels increase, is the reactance of the parasitic inductance in voltage fed converter. This inductance is responsible for a multitude of limitations and problems in high frequency converters, with the most important being unstable voltage supplies, large voltage spikes during switching (which leads ...
The power losses in switching devices have a direct effect on the maximum converter power. For a vol...
The results of the study on the effect of the design parameters of a nonlinear inductor on the level...
A co-planar tab-slot type of interconnect demonstrator for connecting power switching devices and DC...
M.Ing.The drive for smaller and higher density power supplies have been realised by advances in swit...
© The Institution of Engineering and Technology 2018. Reconfiguration, sizing and downsizing of the ...
SiC transistors can switch extremely fast. Often turn-off di/dt is reduced to limit the turn-off ove...
This paper first analyzes the current paths on a planar busbar based on IGBT bridge switching states...
SiC transistors can switch extremely fast. Often turn-off di/dt is reduced to limit the turn-off ove...
The results of the study on the effect of the design parameters of a nonlinear inductor on the level...
Abstract: In high power converter design, low-inductance busbar connecting DC capacitors and power d...
Fast switching operations in IGBTs generate electromagnetic field disturbances, which might cause EM...
This paper first analyzes the current paths on a planar busbar based on insulated-gate bipolar trans...
Tallennetaan OA-artikkeli, kun julkaistuWide band gap devices have enabled miniaturization of magnet...
Planar busbar is a good candidate to reduce interconnection inductance in high power inverters compa...
Recently voltage source converter-based HVDC technology has witnessed a remarkable development due t...
The power losses in switching devices have a direct effect on the maximum converter power. For a vol...
The results of the study on the effect of the design parameters of a nonlinear inductor on the level...
A co-planar tab-slot type of interconnect demonstrator for connecting power switching devices and DC...
M.Ing.The drive for smaller and higher density power supplies have been realised by advances in swit...
© The Institution of Engineering and Technology 2018. Reconfiguration, sizing and downsizing of the ...
SiC transistors can switch extremely fast. Often turn-off di/dt is reduced to limit the turn-off ove...
This paper first analyzes the current paths on a planar busbar based on IGBT bridge switching states...
SiC transistors can switch extremely fast. Often turn-off di/dt is reduced to limit the turn-off ove...
The results of the study on the effect of the design parameters of a nonlinear inductor on the level...
Abstract: In high power converter design, low-inductance busbar connecting DC capacitors and power d...
Fast switching operations in IGBTs generate electromagnetic field disturbances, which might cause EM...
This paper first analyzes the current paths on a planar busbar based on insulated-gate bipolar trans...
Tallennetaan OA-artikkeli, kun julkaistuWide band gap devices have enabled miniaturization of magnet...
Planar busbar is a good candidate to reduce interconnection inductance in high power inverters compa...
Recently voltage source converter-based HVDC technology has witnessed a remarkable development due t...
The power losses in switching devices have a direct effect on the maximum converter power. For a vol...
The results of the study on the effect of the design parameters of a nonlinear inductor on the level...
A co-planar tab-slot type of interconnect demonstrator for connecting power switching devices and DC...