Miniaturized light sources are important component for the development of on-chip optical networks. In this work, InGaAs/InP single quantum well (QW) nanowire array light emitting diodes (LEDs) with high uniformity have been demonstrated at telecommunication wavelength with high-speed modulation towards GHz-level operation
We demonstrated a nonlithographic method for integrating GaAs nanowire (NW) array-based light-emitti...
Semiconductors nanowires have to potential to be building blocks for future nano-optoelectronic devi...
We review our results on integrated photonic devices fabricated using InGaAs quantum-dots. Selective...
III-V semiconductor nanowire infrared light emitting diodes (LEDs) have great potential for the deve...
We report multiwavelength single InGaAs/InP quantum well nanowire light-emitting diodes grown by met...
Since the beginning of the new millennium, the nano-materials community has witnessed an exponential...
International audienceWe review principles and trends in the use of semiconductor nanowires as gain ...
Light emitting diodes are robust and high efficiency light sources that have the potential to replac...
Nano-scale optoelectronic devices have gained significant attention in recent years. Among these dev...
Nanowires (NWs) have the potential for a wide range of new optoelectronic applications. For example,...
Dual-wavelength multiple quantum wells (MQWs) have great potential in realizing high quality illumin...
We report reproducible fabrication of InP-InAsP nanowire light-emitting diodes in which electron-hol...
InGaAs quantum dots (QDs) and nanowires have been grown on GaAs by metal-organic chemical vapour dep...
Abstract: Semiconductor nanowires (NWs) represent an ideal system for investigating low-dimensional ...
We demonstrated a nonlithographic method for integrating GaAs nanowire (NW) array-based light-emitti...
Semiconductors nanowires have to potential to be building blocks for future nano-optoelectronic devi...
We review our results on integrated photonic devices fabricated using InGaAs quantum-dots. Selective...
III-V semiconductor nanowire infrared light emitting diodes (LEDs) have great potential for the deve...
We report multiwavelength single InGaAs/InP quantum well nanowire light-emitting diodes grown by met...
Since the beginning of the new millennium, the nano-materials community has witnessed an exponential...
International audienceWe review principles and trends in the use of semiconductor nanowires as gain ...
Light emitting diodes are robust and high efficiency light sources that have the potential to replac...
Nano-scale optoelectronic devices have gained significant attention in recent years. Among these dev...
Nanowires (NWs) have the potential for a wide range of new optoelectronic applications. For example,...
Dual-wavelength multiple quantum wells (MQWs) have great potential in realizing high quality illumin...
We report reproducible fabrication of InP-InAsP nanowire light-emitting diodes in which electron-hol...
InGaAs quantum dots (QDs) and nanowires have been grown on GaAs by metal-organic chemical vapour dep...
Abstract: Semiconductor nanowires (NWs) represent an ideal system for investigating low-dimensional ...
We demonstrated a nonlithographic method for integrating GaAs nanowire (NW) array-based light-emitti...
Semiconductors nanowires have to potential to be building blocks for future nano-optoelectronic devi...
We review our results on integrated photonic devices fabricated using InGaAs quantum-dots. Selective...