Role of pO2 and film microstructure on the memristive properties of La2NiO4+δ/LaNiO3−δ bilayers

Altres ajuts: ICN2 is funded by the CERCA programme/Generalitat de Catalunya.LaNiO/LaNiO bilayers deposited at varying pO conditions resulted in remarkable differences in film microstructure and cell parameters, directly affecting the electrical behaviour of Pt/LaNiO/LaNiO/Pt devices. The devices deposited at low pO showed the largest memristance. We propose this is due to the formation of a p-type Schottky contact between LaNiO and LaNiO, where the extent of its carrier depletion width can be modulated by the electric-field induced drift of interstitial oxygen ions acting as mobile acceptor dopants in LaNiO