Progress in solid state power conversion is dependent primarily on advances in the art and science of semiconductor power devices. Supporting components, primarily capacitors of the electrolytic and nonelectrolytic type, are also in need of additional strong development. However, fast recovery semiconductor diodes, and semiconductor switches capable of fast, i.e. micro-second or less, turn on and off are in greatest need. These devices must also have high voltage ratings, i.e., 1200v or higher, to efficiently handle substantial power at industrial 30 480v levels. In many cases higher voltage levels would be desirable. High voltage and high speed create conflicting demands on the design of these components. An additional requirement that is ...
The in-depth analysis of the Semiconductor Power Electronics applications are essential for future d...
Moore\u27s Law influences more than just the speed of the latest microprocessor. The law drives many...
Thyristors are usually three-terminal devices that have four layers of alternating p-type and n-type...
Progress in solid state power conversion is dependent primarily on advances in the art and science o...
This thesis is concerned with a mathematical evaluation of a proposed new Gate Turn Off Thyristor. T...
Quality and reliability of electrical power have become a must for many industries and applications....
During the three decades spent, the advances of high voltage/current semiconductor technology direct...
Abstract:- Power semiconductor devices are the key electronic components used in power electronic sy...
We have successfully produced an optically triggered thyristor based in GaAs, developed a model for ...
A high speed power switch with unique turn-off capability was developed. This gate-assisted turn-off...
Modern power semiconductor devices have low capacitances and can therefore achieve very fast switchi...
Abstract: Bipolar semiconductor devices are often used as switches in very high power electronic cir...
This paper presents new gallium arsenide power Schottky diodes with blocking voltages of some hundre...
The IGBT has become the device of choice in many high-voltage-power electronic applications, by virt...
This chapter provides an overview of power MOSFET (metal oxide semiconductor field effect transistor...
The in-depth analysis of the Semiconductor Power Electronics applications are essential for future d...
Moore\u27s Law influences more than just the speed of the latest microprocessor. The law drives many...
Thyristors are usually three-terminal devices that have four layers of alternating p-type and n-type...
Progress in solid state power conversion is dependent primarily on advances in the art and science o...
This thesis is concerned with a mathematical evaluation of a proposed new Gate Turn Off Thyristor. T...
Quality and reliability of electrical power have become a must for many industries and applications....
During the three decades spent, the advances of high voltage/current semiconductor technology direct...
Abstract:- Power semiconductor devices are the key electronic components used in power electronic sy...
We have successfully produced an optically triggered thyristor based in GaAs, developed a model for ...
A high speed power switch with unique turn-off capability was developed. This gate-assisted turn-off...
Modern power semiconductor devices have low capacitances and can therefore achieve very fast switchi...
Abstract: Bipolar semiconductor devices are often used as switches in very high power electronic cir...
This paper presents new gallium arsenide power Schottky diodes with blocking voltages of some hundre...
The IGBT has become the device of choice in many high-voltage-power electronic applications, by virt...
This chapter provides an overview of power MOSFET (metal oxide semiconductor field effect transistor...
The in-depth analysis of the Semiconductor Power Electronics applications are essential for future d...
Moore\u27s Law influences more than just the speed of the latest microprocessor. The law drives many...
Thyristors are usually three-terminal devices that have four layers of alternating p-type and n-type...