The SiC(111)−(3×3) phase was analyzed by scanning tunneling microscopy (STM), low-energy electron diffraction (LEED) holography, density functional theory (DFT), and conventional LEED. A single adatom per unit cell found in STM acts as a beam splitter for the holographic inversion of discrete LEED spot intensities. The resulting 3D image guides the detailed analyses by LEED and DFT which find a Si tetramer on a twisted Si adlayer with cloverlike rings. This twist model with one dangling bond left per unit cell represents a novel (n×n)-reconstruction mechanism of group-IV (111) surfaces
We have systematically studied reconstructions of the 6H SiC(0001) and (000-1) surface under both Si...
We review the most recent advances into the knowledge and the understanding of cubic silicon carbide...
We present a combined cross-section scanning tunneling microscopy (STM) and scanning tunneling spect...
The atomic structure of reconstruction phases on silicon rich hexagonal SiC surfaces was investigate...
Following on the success of the recent application of holographic LEED to the determination of the t...
For the example of the SiC(111)-(3×3)reconstruction we show that a holographic interpretation of dis...
Growth of SiC wafer material, of heterostructures with alternating SiC crystal modications (polytype...
The result on 6H-SiC(0001)-(√3 × √3) R 30° surface obtained by low-energy electron diffraction(LEED)...
The basal surfaces of hexagonal SiC exhibit a large variety of surface reconstructions that develop...
International audienceSilicon carbide (SiC) is nowadays a major material for applications in high po...
We examine several different reconstructions of the fl-SiC(100) surface by the ab initio Car-Parrine...
Cleaved surfaces of silicon carbide were investigated using low-energy electron diffraction (LEED) a...
International audienceIn this letter, we explore the potential energy surface (PES) of the 3×3 C-fac...
Silicon carbide (SiC) is an excellent substrate for growth and manipulation of large scale, high qua...
Structure and stability of nonpolar surfaces in 4H- and 6H-SiC have been investigated within the fra...
We have systematically studied reconstructions of the 6H SiC(0001) and (000-1) surface under both Si...
We review the most recent advances into the knowledge and the understanding of cubic silicon carbide...
We present a combined cross-section scanning tunneling microscopy (STM) and scanning tunneling spect...
The atomic structure of reconstruction phases on silicon rich hexagonal SiC surfaces was investigate...
Following on the success of the recent application of holographic LEED to the determination of the t...
For the example of the SiC(111)-(3×3)reconstruction we show that a holographic interpretation of dis...
Growth of SiC wafer material, of heterostructures with alternating SiC crystal modications (polytype...
The result on 6H-SiC(0001)-(√3 × √3) R 30° surface obtained by low-energy electron diffraction(LEED)...
The basal surfaces of hexagonal SiC exhibit a large variety of surface reconstructions that develop...
International audienceSilicon carbide (SiC) is nowadays a major material for applications in high po...
We examine several different reconstructions of the fl-SiC(100) surface by the ab initio Car-Parrine...
Cleaved surfaces of silicon carbide were investigated using low-energy electron diffraction (LEED) a...
International audienceIn this letter, we explore the potential energy surface (PES) of the 3×3 C-fac...
Silicon carbide (SiC) is an excellent substrate for growth and manipulation of large scale, high qua...
Structure and stability of nonpolar surfaces in 4H- and 6H-SiC have been investigated within the fra...
We have systematically studied reconstructions of the 6H SiC(0001) and (000-1) surface under both Si...
We review the most recent advances into the knowledge and the understanding of cubic silicon carbide...
We present a combined cross-section scanning tunneling microscopy (STM) and scanning tunneling spect...