CONSTRUCTION AND CHARACTERIZATION OF A 117-CM(2) SILICON PIXEL DETECTOR
- HEIJNE EHM
- BARBERIS D
- BEKER H
- BEUSCH W
- BURGER P
- CAMPBELL M
- CANTATORE E
- CATANESI MG
- CHESI E
- DARBO G
- DAURIA S
- DAVIA C
- Di Bari D
- DILIBERTO S
- ELIA D
- GYS T
- HELSTRUP H
- HEUSER JM
- JACHOLKOWSKI A
- JARRON P
- KLEMPT W
- KRALIK I
- KRUMMENACHER F
- LASALLE JC
- LEITNER R
- LEMEILLEUR F
- LENTI V
- LOKAJICEK M
- LOPEZ L
- LUPTAK M
- MAGGI G
- MARTINENGO P
- MEDDI F
- MENETREY A
- MIDDELKAMP P
- MORANDO M
- MUNNS A
- MUSICO P
- PELLEGRINI F
- POSPISIL S
- QUERCIGH E
- RIDKY J
- ROSSI L
- SAFARIK K
- SALADINO S
- SEGATO G
- SIMONE S
- SNOEYS W
- STEFANINI G
- VRBA V.
- DI BARI, Domenico
Publication date
January 1995
DOI Publisher
Institute of Electrical and Electronics Engineers (IEEE)Abstract
A silicon pixel detector, developed in RD19, and consisting of 4 planes, similar to 30 cm(2) each, is operating for the first time in the lead ion experiment WA97 at CERN. The 288 CMOS readout chips are bump-bonded to 48 Si detector matrices, assembled in 8 identical arrays. The total number of pixel cells is nearly 300 000 and each cell, 75 mu m x 500 mu m, contains a complete signal processing chain. Overall dead area is less than 3%
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