The paper deals with characterisation and modelling of laser milling process on silicon carbide hard ceramic. To this end, a Yb:YAG pulsed fiber laser was adopted to mill silicon carbide bars. Square pockets, 5x5 mm(2) in plane dimension, were machined at the maximum nominal average power (30W), under different laser process parameters: pulse frequency, scan speed, hatching distance, repetitions and scanning strategy. After machining, the achieved depth and the roughness parameters were measured by way of digital microscopy and 3D surface profiling, respectively. In addition, the material removal rate was calculated as the ratio between the removed volume/process time. Analysis of variance (ANOVA) was adopted to assess the effect of the pro...
In this study, sintered silicon carbide is machined on a high-precision milling machine with a high-...
Laser surface engineering of cutting tools is used to improve the performance of cutting processes v...
Silicon carbide (SiC) is a wide bandgap compound semiconductor suitable for high temperature and hig...
The paper deals with characterisation and modelling of laser milling process on silicon carbide hard...
The paper deals with characterisation and modelling of laser milling process on silicon carbide hard...
The paper deals with characterisation and modelling of laser milling process on silicon carbide hard...
The paper deals with characterisation and modelling of laser milling process on silicon carbide hard...
The paper deals with characterisation and modelling of laser milling process on silicon carbide hard...
This work investigates the feasibility of laser engraving of silicon carbide by adopting a Q-Switche...
This work investigates the feasibility of laser engraving of silicon carbide by adopting a Q-Switche...
Advisors: Federico Sciammarella.Committee members: Pradip Majumdar; Iman Salehinia.Over the last dec...
This study is focused on numerical modeling and experimental evaluation of laser-assisted micromachi...
This study focused on the experimental and theoretical evaluation of the laser assisted machining (L...
The properties of high strength, wear resistance, and high brittleness, make silicon carbide (SiC) m...
In this study, sintered silicon carbide is machined on a high-precision milling machine with a high-...
In this study, sintered silicon carbide is machined on a high-precision milling machine with a high-...
Laser surface engineering of cutting tools is used to improve the performance of cutting processes v...
Silicon carbide (SiC) is a wide bandgap compound semiconductor suitable for high temperature and hig...
The paper deals with characterisation and modelling of laser milling process on silicon carbide hard...
The paper deals with characterisation and modelling of laser milling process on silicon carbide hard...
The paper deals with characterisation and modelling of laser milling process on silicon carbide hard...
The paper deals with characterisation and modelling of laser milling process on silicon carbide hard...
The paper deals with characterisation and modelling of laser milling process on silicon carbide hard...
This work investigates the feasibility of laser engraving of silicon carbide by adopting a Q-Switche...
This work investigates the feasibility of laser engraving of silicon carbide by adopting a Q-Switche...
Advisors: Federico Sciammarella.Committee members: Pradip Majumdar; Iman Salehinia.Over the last dec...
This study is focused on numerical modeling and experimental evaluation of laser-assisted micromachi...
This study focused on the experimental and theoretical evaluation of the laser assisted machining (L...
The properties of high strength, wear resistance, and high brittleness, make silicon carbide (SiC) m...
In this study, sintered silicon carbide is machined on a high-precision milling machine with a high-...
In this study, sintered silicon carbide is machined on a high-precision milling machine with a high-...
Laser surface engineering of cutting tools is used to improve the performance of cutting processes v...
Silicon carbide (SiC) is a wide bandgap compound semiconductor suitable for high temperature and hig...