Fast electrical and optical activation of RF switches integrating vanadium dioxide (VO2) phase change material

We report the electrical and optical activation of the insulator-To-metallic transition in vanadium dioxide (VO2) thin films acting as switching elements for RF switches, single-pole single-Throw (SPST) and single-pole double-Throw (SPDT) type devices showing good RF performances (high isolation and low insertion losses). The VO2-based RF switches based on different topologies can be actuated on a nanosecond timescale, using both electrical and optical short pulses.The authors acknowledge the funding support from the French National Research Agency (ANR) through the projectWith funding from the Spanish government through the ‘Severo Ochoa Centre of Excellence’ accreditation (CEX2019-000917-S).N