Add to ORKGThe random telegraph noise (RTN) of tunnel field-effect transistors (TFETs) has been investigated. It has been observed that the RTN of TFETs arises from the tunnel carriers trapped and detrapped by oxide traps around the tunnel region. In addition, the trapped tunnel charge carriers modulate the tunnel energy band, which in turn causes tunnel currents to modulate. It is different than the RTN of MOSFETs which is affected by both number and correlated mobility fluctuations of channel inversion carriers.N
Random telegraph noise (RTN) has been long debated in many theoretical and experimental studies. Its...
ÐFor the relative amplitude of the random telegraph signal noise (RTS) in a MOS transistor DG/G=DI/I...
Noise models for diodes and transistors I pn junctions and BJTs- shot noise, flicker noise, burst no...
In this paper, the anomalously large random telegraph signal (RTS) noise amplitudes in tunneling fie...
We have found a systematic way to identify the bias conditions to observe the Random-Telegraph-Noise...
As one of the important sources of lowfrequency noise, random telegraph noise (RTN) in tunnel FET (T...
The Random Telegraph Noise (RTN) in an advanced Metal-Oxide-Semiconductor Field-Effect Transistor (M...
The low frequency noise (LFN) mechanisms of TFETs with different source junction design are experime...
Abstract — This paper analyzes the impacts of a single acceptor-type and donor-type interface trap i...
Tunnel Field Effect Transistors (TFETs) have appeared as an alternative candidate of “beyond CMOS” d...
Single gate oxide defects in strongly scaled Tunneling Field-Effect Transistors with an inverse subt...
In this paper, a new pattern of anomalous random telegraph noise (RTN), named "reversal RTN&quo...
International audienceLow frequency noise (LFN) and random telegraph noise (RTN) are investigated st...
International audienceIn this work, we present our latest modeling approaches regarding low-frequenc...
Random telegraph signal (RTS) fluctuations with relative amplitude up to 50% are observed in forward...
Random telegraph noise (RTN) has been long debated in many theoretical and experimental studies. Its...
ÐFor the relative amplitude of the random telegraph signal noise (RTS) in a MOS transistor DG/G=DI/I...
Noise models for diodes and transistors I pn junctions and BJTs- shot noise, flicker noise, burst no...
In this paper, the anomalously large random telegraph signal (RTS) noise amplitudes in tunneling fie...
We have found a systematic way to identify the bias conditions to observe the Random-Telegraph-Noise...
As one of the important sources of lowfrequency noise, random telegraph noise (RTN) in tunnel FET (T...
The Random Telegraph Noise (RTN) in an advanced Metal-Oxide-Semiconductor Field-Effect Transistor (M...
The low frequency noise (LFN) mechanisms of TFETs with different source junction design are experime...
Abstract — This paper analyzes the impacts of a single acceptor-type and donor-type interface trap i...
Tunnel Field Effect Transistors (TFETs) have appeared as an alternative candidate of “beyond CMOS” d...
Single gate oxide defects in strongly scaled Tunneling Field-Effect Transistors with an inverse subt...
In this paper, a new pattern of anomalous random telegraph noise (RTN), named "reversal RTN&quo...
International audienceLow frequency noise (LFN) and random telegraph noise (RTN) are investigated st...
International audienceIn this work, we present our latest modeling approaches regarding low-frequenc...
Random telegraph signal (RTS) fluctuations with relative amplitude up to 50% are observed in forward...
Random telegraph noise (RTN) has been long debated in many theoretical and experimental studies. Its...
ÐFor the relative amplitude of the random telegraph signal noise (RTS) in a MOS transistor DG/G=DI/I...
Noise models for diodes and transistors I pn junctions and BJTs- shot noise, flicker noise, burst no...