Monolithic three-dimensional (M3D) CMOS-nanoelectromechanical (CMOS-NEM) reconfigurable logic (RL) circuits are experimentally demonstrated. This is the first experimental demonstration of 65-nm M3D CMOS-NEM RL circuits satisfying the 1.2-V supply voltage (VDD) requirement of the 65-nm technology node. The fabrication process is identical to the conventional 65-nm CMOS baseline process, in which copper NEM memory switches are formed by a dual damascene process.N
Considering the isotropic release process of nanoelectromechanical systems (NEMSs), defining the act...
Tri-state nanoelectromechanical (NEM) memory switches are proposed for the implementation of high-im...
A novel "slingshot" pull-in operation is proposed to lower the operation voltage (V-DD) of...
Island-style monolithic three-dimensional (M3D) CMOS- nanoelectromechanical (CMOS-NEM) reconfigurabl...
© 2022, Institute of Electronics Engineers of Korea. All rights reserved.—Recent research on NEM dev...
The scaling trends of monolithic 3-D (M3-D) complementary metal-oxide-semiconductor (CMOS) nanoelect...
Monolithic three-dimensional (M3D) reconfigurable logic (RL) circuits of tunnel field-effect transis...
This work demonstrates the feasibility to obtain copper nanoelectromechanical (NEMS) relays using a ...
This work demonstrates the feasibility to obtain copper nanoelectromechanical (NEMS) relays using a ...
Nanoelectromechanical (NEM) switches have the potential to complement or replace traditional CMOS tr...
Nanoelectromechanical (NEM) switches have the potential to complement or replace traditional CMOS tr...
Nanoelectromechanical (NEM) switches have the potential to complement or replace traditional CMOS tr...
This study proposes novel structures and a novel process for lateral nanoelectromechanical (NEM) rel...
The accurate calculation of switching voltage (V-s) is necessary for the reliable and low-power oper...
Considering the isotropic release process of nanoelectromechanical systems (NEMSs), defining the act...
Considering the isotropic release process of nanoelectromechanical systems (NEMSs), defining the act...
Tri-state nanoelectromechanical (NEM) memory switches are proposed for the implementation of high-im...
A novel "slingshot" pull-in operation is proposed to lower the operation voltage (V-DD) of...
Island-style monolithic three-dimensional (M3D) CMOS- nanoelectromechanical (CMOS-NEM) reconfigurabl...
© 2022, Institute of Electronics Engineers of Korea. All rights reserved.—Recent research on NEM dev...
The scaling trends of monolithic 3-D (M3-D) complementary metal-oxide-semiconductor (CMOS) nanoelect...
Monolithic three-dimensional (M3D) reconfigurable logic (RL) circuits of tunnel field-effect transis...
This work demonstrates the feasibility to obtain copper nanoelectromechanical (NEMS) relays using a ...
This work demonstrates the feasibility to obtain copper nanoelectromechanical (NEMS) relays using a ...
Nanoelectromechanical (NEM) switches have the potential to complement or replace traditional CMOS tr...
Nanoelectromechanical (NEM) switches have the potential to complement or replace traditional CMOS tr...
Nanoelectromechanical (NEM) switches have the potential to complement or replace traditional CMOS tr...
This study proposes novel structures and a novel process for lateral nanoelectromechanical (NEM) rel...
The accurate calculation of switching voltage (V-s) is necessary for the reliable and low-power oper...
Considering the isotropic release process of nanoelectromechanical systems (NEMSs), defining the act...
Considering the isotropic release process of nanoelectromechanical systems (NEMSs), defining the act...
Tri-state nanoelectromechanical (NEM) memory switches are proposed for the implementation of high-im...
A novel "slingshot" pull-in operation is proposed to lower the operation voltage (V-DD) of...