Add to ORKGA full three-dimensional technology-computer-aided-design-based reliability prediction model was proposed for dynamic random-access memory (DRAM) storage capacitors. The model can be used to predict the time-dependent dielectric breakdown as well as leakage current of a state-of-the-art DRAM storage capacitor with a complex three-dimensional structure.N
The introduction of High-κ Metal Gate transistors led to higher integration density, low leakage cur...
We propose a method to monitor the ageing and damage of capacitors based on their irreversible entro...
Time dependent dielectric breakdown (TDDB) and stress-induced leakage current (SILC) are investigate...
A full three-dimensional technology-computer-aided-design-based reliability prediction model was pro...
The influence of etch profiles on leakage current and capacitance of three-dimensional (3-D) dynamic...
An increasing amount of critical applications use DRAM as main memory in its computing systems. It i...
In this paper, we present a physically-based Monte-Carlo (MC) model reproducing the leakage current ...
In this paper, we present a physically-based Monte-Carlo (MC) model reproducing the leakage current ...
Some analysts fear that the semiconductor technology has entered, or is about to enter, the mature s...
We present a quantitative physical model describingthe current evolution due to the formation of a c...
Predict possible types of physical defects from electrical failure analysis using the Micromate test...
Time dependent dielectric breakdown (TDDB) is one of the important failure mechanisms for Copper (Cu...
With the scaling of the CMOS technology and the associated gate oxide thickness, the reliability of ...
Sophisticated computer tools and techniques have been developed to increase the productivity of the ...
This thesis considers methods for predicting reliability and mean time to first failure of complex s...
The introduction of High-κ Metal Gate transistors led to higher integration density, low leakage cur...
We propose a method to monitor the ageing and damage of capacitors based on their irreversible entro...
Time dependent dielectric breakdown (TDDB) and stress-induced leakage current (SILC) are investigate...
A full three-dimensional technology-computer-aided-design-based reliability prediction model was pro...
The influence of etch profiles on leakage current and capacitance of three-dimensional (3-D) dynamic...
An increasing amount of critical applications use DRAM as main memory in its computing systems. It i...
In this paper, we present a physically-based Monte-Carlo (MC) model reproducing the leakage current ...
In this paper, we present a physically-based Monte-Carlo (MC) model reproducing the leakage current ...
Some analysts fear that the semiconductor technology has entered, or is about to enter, the mature s...
We present a quantitative physical model describingthe current evolution due to the formation of a c...
Predict possible types of physical defects from electrical failure analysis using the Micromate test...
Time dependent dielectric breakdown (TDDB) is one of the important failure mechanisms for Copper (Cu...
With the scaling of the CMOS technology and the associated gate oxide thickness, the reliability of ...
Sophisticated computer tools and techniques have been developed to increase the productivity of the ...
This thesis considers methods for predicting reliability and mean time to first failure of complex s...
The introduction of High-κ Metal Gate transistors led to higher integration density, low leakage cur...
We propose a method to monitor the ageing and damage of capacitors based on their irreversible entro...
Time dependent dielectric breakdown (TDDB) and stress-induced leakage current (SILC) are investigate...