Monolithic three-dimensional (M3D) multilayer nanoelectromechanical (NEM) memory switches are experimentally demonstrated for reconfigurable multi-path routing. The multi-layer NEM memory switch has moving mechanical beams in different metal layers which operate independently in a nonvolatile manner, including high impedance states. For example, double-layer NEM memory switches implement nine different memory states. It is predicted that our proposed n-layer NEM memory switches utilizing n metal layers will exhibit 3((n-1)) x higher routing flexibility and nx higher chip density than conventional single-layer NEM memory switches.N
The scaling trends of monolithic 3-D (M3-D) complementary metal-oxide-semiconductor (CMOS) nanoelect...
A Nanoelectromechanical (NEM) device developed for dynamic random access memory (DRAM) is reported. ...
The static switching properties and readout characteristics of proposed high-speed and nonvolatile n...
Tri-state nanoelectromechanical (NEM) memory switches are proposed for the implementation of high-im...
Monolithic three-dimensional (M3D) reconfigurable logic (RL) circuits of tunnel field-effect transis...
Mutually-actuated-nano-electromechanical (MA-NEM) memory switches are proposed for scalability impro...
The application of nanoelectromechanical (NEM) memory switches to field-programmable gate arrays (FP...
© 2022, Institute of Electronics Engineers of Korea. All rights reserved.—Recent research on NEM dev...
This paper proposes a novel nanoelectromechanical-switch-based binary content-addressable memory (NE...
A tristate-nanoelectromechanical-switch-based ternary content-addressable memory (NEMTCAM) is propos...
This study proposes novel structures and a novel process for lateral nanoelectromechanical (NEM) rel...
Considering the isotropic release process of nanoelectromechanical systems (NEMSs), defining the act...
Considering the isotropic release process of nanoelectromechanical systems (NEMSs), defining the act...
Considering the isotropic release process of nanoelectromechanical systems (NEMSs), defining the act...
Monolithic three-dimensional (M3D) CMOS-nanoelectromechanical (CMOS-NEM) reconfigurable logic (RL) c...
The scaling trends of monolithic 3-D (M3-D) complementary metal-oxide-semiconductor (CMOS) nanoelect...
A Nanoelectromechanical (NEM) device developed for dynamic random access memory (DRAM) is reported. ...
The static switching properties and readout characteristics of proposed high-speed and nonvolatile n...
Tri-state nanoelectromechanical (NEM) memory switches are proposed for the implementation of high-im...
Monolithic three-dimensional (M3D) reconfigurable logic (RL) circuits of tunnel field-effect transis...
Mutually-actuated-nano-electromechanical (MA-NEM) memory switches are proposed for scalability impro...
The application of nanoelectromechanical (NEM) memory switches to field-programmable gate arrays (FP...
© 2022, Institute of Electronics Engineers of Korea. All rights reserved.—Recent research on NEM dev...
This paper proposes a novel nanoelectromechanical-switch-based binary content-addressable memory (NE...
A tristate-nanoelectromechanical-switch-based ternary content-addressable memory (NEMTCAM) is propos...
This study proposes novel structures and a novel process for lateral nanoelectromechanical (NEM) rel...
Considering the isotropic release process of nanoelectromechanical systems (NEMSs), defining the act...
Considering the isotropic release process of nanoelectromechanical systems (NEMSs), defining the act...
Considering the isotropic release process of nanoelectromechanical systems (NEMSs), defining the act...
Monolithic three-dimensional (M3D) CMOS-nanoelectromechanical (CMOS-NEM) reconfigurable logic (RL) c...
The scaling trends of monolithic 3-D (M3-D) complementary metal-oxide-semiconductor (CMOS) nanoelect...
A Nanoelectromechanical (NEM) device developed for dynamic random access memory (DRAM) is reported. ...
The static switching properties and readout characteristics of proposed high-speed and nonvolatile n...