Add to ORKGTo investigate metal-ferroelectric-insulator-semiconductor (MFIS) stack design guidelines for its applications, the ferroelectricity in various IL thicknesses were investigated. As a result, IL has leaky insulator characteristics rather than an ideal dielectric and the MFIS stack shows a critical difference in ferroelectric characteristics.N
We explore the influence of the top electrode materials (W, Co, Ni, Ir) on the electronic band profi...
The frequency dependent capacitance-voltage (C-V) and conductance-voltage (G/omega-V) characteristic...
Gokcen, Muharrem/0000-0001-9063-3028; YILDIRIM, Mert/0000-0002-8526-1802WOS: 000336899800011Present ...
This article examines the thickness effects of ferroelectric films on gate tunneling suppression and...
An improved model, in which the interface traps effects are considered, is developed by combining wi...
An improved model, in which the interface traps effects are considered, is developed by combining wi...
The urge to develop efficient and ultra-low power architectures for modern and future technological ...
The urge to develop efficient and ultra-low power architectures for modern and future technological ...
Ever since the ferroelectricity of complementary metal-oxide semiconductor (CMOS) compatible HfO2-ba...
Ferroelectric field effect transistors (FeFETs) have attracted much attention recently because of th...
Ferroelectric field effect transistors (FeFETs) have attracted much attention recently because of th...
Ferroelectric field effect transistors (FeFETs) have attracted much attention recently because of th...
Density functional theory (DFT) is employed to investigate ferroelectric (FE) hafnium-zirconium oxid...
International audienceHerein, the effect of a 2 nm thin aluminum layer inserted between the ferroele...
Control of charge carrier distribution in a gated channel via a dielectric layer is currently the st...
We explore the influence of the top electrode materials (W, Co, Ni, Ir) on the electronic band profi...
The frequency dependent capacitance-voltage (C-V) and conductance-voltage (G/omega-V) characteristic...
Gokcen, Muharrem/0000-0001-9063-3028; YILDIRIM, Mert/0000-0002-8526-1802WOS: 000336899800011Present ...
This article examines the thickness effects of ferroelectric films on gate tunneling suppression and...
An improved model, in which the interface traps effects are considered, is developed by combining wi...
An improved model, in which the interface traps effects are considered, is developed by combining wi...
The urge to develop efficient and ultra-low power architectures for modern and future technological ...
The urge to develop efficient and ultra-low power architectures for modern and future technological ...
Ever since the ferroelectricity of complementary metal-oxide semiconductor (CMOS) compatible HfO2-ba...
Ferroelectric field effect transistors (FeFETs) have attracted much attention recently because of th...
Ferroelectric field effect transistors (FeFETs) have attracted much attention recently because of th...
Ferroelectric field effect transistors (FeFETs) have attracted much attention recently because of th...
Density functional theory (DFT) is employed to investigate ferroelectric (FE) hafnium-zirconium oxid...
International audienceHerein, the effect of a 2 nm thin aluminum layer inserted between the ferroele...
Control of charge carrier distribution in a gated channel via a dielectric layer is currently the st...
We explore the influence of the top electrode materials (W, Co, Ni, Ir) on the electronic band profi...
The frequency dependent capacitance-voltage (C-V) and conductance-voltage (G/omega-V) characteristic...
Gokcen, Muharrem/0000-0001-9063-3028; YILDIRIM, Mert/0000-0002-8526-1802WOS: 000336899800011Present ...