Electronic Properties of Carbon Nanotubes and Their Application in Making Nanotransistors

In this work, the electronic properties of carbon nanotubes (CNT) are studied and the results show that these properties depend greatly on the structural characteristics of graphene layers before rolling. Field effect transistor based on CNT, which are examined using ballistic nanotransistor theory, exhibites good technical parameters: high ON/OFF ratio, good transconductance and carrier velocity of 106, 10-4 (S/m) and 106 (m/s). Drain-Source current through CNT is 4 times higher, transconductance is 4 times higher and velocity is double compared to conventional Si MOSFET. It is also found that working parameters of the device display strong dependence on CNT diameter. Furthermore, CNT transistors also operates at very low voltage, corresponding to low power consumption,which is a new advancement for using of carbon nanotubes to replace silicon in making transistors