Single Event Transients (SETs) can be a major concern for combinational circuits. Its importance grows as technology scales because a small charge can create a large disturbance on a circuit node. One example of circuits that can suffer from SETs is the decoders of the Error Correction Codes (ECCs) that are used to protect memories from errors. This paper presents Correction Masking (CM), a technique to implement SET tolerant syndrome decoders. The proposed technique is presented and evaluated both in terms of protection effectiveness and circuit overhead. The results show that it can provide an effective protection while reducing the circuit area and power significantly compared to a Triple Modular Redundancy (TMR) protection. An interesti...
Multilevel cell (MLC) memories have been advocated for increasing density at low cost in next genera...
textOngoing technology improvements and feature size reduction have led to an increase in manufactur...
International audienceTwo error correction schemes are proposed for word-oriented binary memories th...
Single Event Transients (SETs) can be a major concern for combinational circuits. Its importance gro...
(c) 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for...
The primary challenge is the fact that individual’s codes should minimize the delay and area penalty...
Single Event Transient (SET) errors in ground-level electronic devices are a growing concern in the ...
Error correction codes (ECCs) have been used for decades to protect memories from soft errors. Singl...
As technology scaling increases computer memory’s bit-cell density and reduces the voltage of semico...
Multiple upsets would be available in SRAM-based FPGAs which utilizes SRAM in different parts to imp...
Abstract: Now-a-days, the memory devices are susceptible to Single Event Upsets (SEU) which is one o...
Error correction codes are used for long years to protect memories from the soft errors. For a singl...
As technology scales, radiation induced soft errors create more complex error patterns in memories w...
Abstract---Error correction codes (ECCs) have been used for decades to protect memories from soft er...
There has been a rising demand for well-organized and reliable digital storage as well as transmissi...
Multilevel cell (MLC) memories have been advocated for increasing density at low cost in next genera...
textOngoing technology improvements and feature size reduction have led to an increase in manufactur...
International audienceTwo error correction schemes are proposed for word-oriented binary memories th...
Single Event Transients (SETs) can be a major concern for combinational circuits. Its importance gro...
(c) 2015 IEEE. Personal use of this material is permitted. Permission from IEEE must be obtained for...
The primary challenge is the fact that individual’s codes should minimize the delay and area penalty...
Single Event Transient (SET) errors in ground-level electronic devices are a growing concern in the ...
Error correction codes (ECCs) have been used for decades to protect memories from soft errors. Singl...
As technology scaling increases computer memory’s bit-cell density and reduces the voltage of semico...
Multiple upsets would be available in SRAM-based FPGAs which utilizes SRAM in different parts to imp...
Abstract: Now-a-days, the memory devices are susceptible to Single Event Upsets (SEU) which is one o...
Error correction codes are used for long years to protect memories from the soft errors. For a singl...
As technology scales, radiation induced soft errors create more complex error patterns in memories w...
Abstract---Error correction codes (ECCs) have been used for decades to protect memories from soft er...
There has been a rising demand for well-organized and reliable digital storage as well as transmissi...
Multilevel cell (MLC) memories have been advocated for increasing density at low cost in next genera...
textOngoing technology improvements and feature size reduction have led to an increase in manufactur...
International audienceTwo error correction schemes are proposed for word-oriented binary memories th...