Magnetic RAM (MRAM) is a new memory technology with access and cost characteristics comparable to those of conventional dynamic RAM (DRAM) and the non-volatility of magnetic media such as disk. Simply replacing DRAM with MRAM will make main memory non-volatile, but it will not improve file system performance. However, effective use of MRAM in a file system has the potential to significantly improve performance over existing file systems. The HeRMES file system will use MRAM to dramatically improve file system performance by using it as a permanent store for both file system data and metadata. In particular, metadata operations, which make up over 50% of all file system requests [14], are nearly free in HeRMES because they do not require any...
Modern file systems assume the use of disk, a system-wide performance bottleneck for over a decade. ...
File systems make use of the buffer cache to enhance their performance. Traditionally, part of DRAM,...
[[abstract]]© 2006 Institute of Electrical and Electronics Engineers -The magnetic random access mem...
Non-volatile RAM (NVRAM) such as PRAM (Phase-change RAM), FeRAM (Ferroelectric RAM), and MRAM (Magne...
File systems using non-volatile RAM (NVRAM) promise great improvements in file system performance ov...
A compact and energy-efficient magnetoresistive random-access memory (MRAM) technology could help lo...
Thesis: M. Eng., Massachusetts Institute of Technology, Department of Materials Science and Engineer...
Performance-hungry data center applications demand increasingly higher performance from their storag...
Non-volatile storage technologies such as flash memory, Magnetic RAM (MRAM), and MEMS-based storage ...
International audienceSRAM, DRAM and FLASH are the three main employed technologies in design of on-...
File systems make use of part of DRAM as the buffer cache to enhance its performance in traditional ...
Storage CLASS Memory (SCM) is a next generation of solid-state, nonvolatile memory. It combines the ...
Add support for the MRCM (Machine Readable Concept Model) Use MRCM to return concept properties acco...
The memory system is a fundamental performance and energy bottleneck in almost all computing systems...
The memory system is a fundamental performance and energy bottleneck in almost all computing systems...
Modern file systems assume the use of disk, a system-wide performance bottleneck for over a decade. ...
File systems make use of the buffer cache to enhance their performance. Traditionally, part of DRAM,...
[[abstract]]© 2006 Institute of Electrical and Electronics Engineers -The magnetic random access mem...
Non-volatile RAM (NVRAM) such as PRAM (Phase-change RAM), FeRAM (Ferroelectric RAM), and MRAM (Magne...
File systems using non-volatile RAM (NVRAM) promise great improvements in file system performance ov...
A compact and energy-efficient magnetoresistive random-access memory (MRAM) technology could help lo...
Thesis: M. Eng., Massachusetts Institute of Technology, Department of Materials Science and Engineer...
Performance-hungry data center applications demand increasingly higher performance from their storag...
Non-volatile storage technologies such as flash memory, Magnetic RAM (MRAM), and MEMS-based storage ...
International audienceSRAM, DRAM and FLASH are the three main employed technologies in design of on-...
File systems make use of part of DRAM as the buffer cache to enhance its performance in traditional ...
Storage CLASS Memory (SCM) is a next generation of solid-state, nonvolatile memory. It combines the ...
Add support for the MRCM (Machine Readable Concept Model) Use MRCM to return concept properties acco...
The memory system is a fundamental performance and energy bottleneck in almost all computing systems...
The memory system is a fundamental performance and energy bottleneck in almost all computing systems...
Modern file systems assume the use of disk, a system-wide performance bottleneck for over a decade. ...
File systems make use of the buffer cache to enhance their performance. Traditionally, part of DRAM,...
[[abstract]]© 2006 Institute of Electrical and Electronics Engineers -The magnetic random access mem...