Abstract We introduce a methodology for density-based topology optimization of non-Fourier thermal transport in nanostructures, based upon adjoint-based sensitivity analysis of the phonon Boltzmann transport equation (BTE) and a novel material interpolation technique, the “transmission interpolation model” (TIM). The key challenge in BTE optimization is handling the interplay between real- and momentum-resolved material properties. By parameterizing the material density with an interfacial transmission coefficient, TIM is able to recover the hard-wall and no-interface limits, while guaranteeing a smooth transition between void and solid regions. We first use our approach to tailor the effective thermal conductivity tensor of ...
The mechanisms of thermal transport in defect-free silicon nanostructures are examined using a combi...
Thesis: Ph. D., Massachusetts Institute of Technology, Department of Mechanical Engineering, 2019Cat...
The mechanisms of thermal transport in defect-free silicon nanostructures are examined using a combi...
We introduce a methodology for density-based topology optimization of non-Fourier thermal transport ...
Interface-induced reduction of thermal conductivity has attracted great interest from both engineeri...
Rapid progress has been made in the manufacture of microelectronic and thermoelectric devices. With ...
Huge development in the synthesis and processing of materials with nanostructures on nanometer lengt...
Boundary-engineering in nanostructures has the potential to dramatically impact the development of m...
Thesis: Ph. D., Massachusetts Institute of Technology, Department of Mechanical Engineering, 2018.Ca...
With the evolution of semiconductor technology toward nanometer size and gigahertz frequency, the tr...
La maîtrise des techniques de fabrication de matériaux nanostructurés a fait émerger ces dernières a...
Tuning thermal transport in nanostructured materials is a powerful approach to develop high-efficien...
The thermal conductance of nanoscale phonon modes is typically calculated using the Boltzmann Transp...
Recent work has demonstrated that nanostructuring of a semiconductor material to form a phononic cry...
Since the past decades, progresses in nanomaterials engineering raise new questions about heat trans...
The mechanisms of thermal transport in defect-free silicon nanostructures are examined using a combi...
Thesis: Ph. D., Massachusetts Institute of Technology, Department of Mechanical Engineering, 2019Cat...
The mechanisms of thermal transport in defect-free silicon nanostructures are examined using a combi...
We introduce a methodology for density-based topology optimization of non-Fourier thermal transport ...
Interface-induced reduction of thermal conductivity has attracted great interest from both engineeri...
Rapid progress has been made in the manufacture of microelectronic and thermoelectric devices. With ...
Huge development in the synthesis and processing of materials with nanostructures on nanometer lengt...
Boundary-engineering in nanostructures has the potential to dramatically impact the development of m...
Thesis: Ph. D., Massachusetts Institute of Technology, Department of Mechanical Engineering, 2018.Ca...
With the evolution of semiconductor technology toward nanometer size and gigahertz frequency, the tr...
La maîtrise des techniques de fabrication de matériaux nanostructurés a fait émerger ces dernières a...
Tuning thermal transport in nanostructured materials is a powerful approach to develop high-efficien...
The thermal conductance of nanoscale phonon modes is typically calculated using the Boltzmann Transp...
Recent work has demonstrated that nanostructuring of a semiconductor material to form a phononic cry...
Since the past decades, progresses in nanomaterials engineering raise new questions about heat trans...
The mechanisms of thermal transport in defect-free silicon nanostructures are examined using a combi...
Thesis: Ph. D., Massachusetts Institute of Technology, Department of Mechanical Engineering, 2019Cat...
The mechanisms of thermal transport in defect-free silicon nanostructures are examined using a combi...