Tunable index silicon nitride for CMOS photonics applications
- Gardes, Frederic Y.
- Domínguez Bucio, Thalía
- Mastronardi, Lorenzo
- De Paoli, Greta
- Jantzen, Senta L.
- Skandalos, Ilias
- Milošević, Milan M.
- Vitali, Valerio
- Faneca, Joaquin
- Petropoulos, Periklis
- Jurado Romero, Francisco
- Luque-González, José Manuel
- Molina-Fernández, Íñigo
- Halir, Robert
- Ortega-Moñux, Alejandro
- Wangüemert-Pérez, J. G.
- Melati, Daniele
- Schmid, Jens H.
- Cheben, Pavel
DOI Publisher
SPIE-Intl Soc Optical EngAbstract
We are demonstrating the use of Low temperature PECVD silicon nitride based materials used for applications ranging from non-linear functionalities in the C band, wavelength division multiplexing in the O band and post fabrication light based refractive index tuning for in-situ device trimming. These materials are demonstrated for waveguide ranging from 300 nm up to 1 micron in thickness with refractive indices varying between 1.9 and 2.55
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