We present the results of the electronic band structure study of Ge$\text{}_{0.9}$Mn$\text{}_{0.1}$Te epilayers, clean and modified in situ by deposition of manganese atoms. The sets of resonant photoemission spectra were measured for the photon energy range covering the energy of Mn 3p→3d transition (45<hν<60 eV). They were acquired for the clean surface of the Ge$\text{}_{0.9}$Mn$\text{}_{0.1}$Te sample, after evaporation of 0.5 monolayer Mn and after annealing (at 200ºC) inducing diffusion of Mn atoms into the Ge$\text{}_{0.9}$Mn$\text{}_{0.1}$Te crystal. The Mn 3d contribution to the emission from the valence band of Ge$\text{}_{0.9}$Mn$\text{}_{0.1}$Te was determined and the strength of interaction between Mn and its ligands was discus...
Ga1-xMnxAs, x = 0.043, has been grown ex situ on GaAs(100) by low-temperature molecular-beam epitaxy...
The surface structure and the electronic properties of the Mn:Ge(111) interface have been investigat...
We have obtained the Mn 3d partial density of states in Ga1-xMnxAs using the resonance photoemission...
The resonant photoemission spectroscopy was applied to investigate the valence band electronic struc...
The valence band structure along the Γ-T and T-W-L directions in the Brillouin zone of GeTe is studi...
The angle integrated resonant photoemission measurements of Zn0.9Mn0.1Se have been performed in the ...
The synchrotron radiation in the energy range between 15 and 70 eV wasused to investigate the electr...
Resonant Photoemission Spectroscopy was applied to investigate changes of valence band electronic st...
Resonant photoemission spectroscopy was applied to determine theMn 3d derived contribution to the va...
The valence band structure along the Γ-T and T-W-L directions in the Brillouin zone of GeTe is studi...
Mn5Ge3(001) thin films grown on Ge(111)-c(2 x 8) reconstructed surfaces were studied by angle-resolv...
The electronic and structural properties of an Mn:Ge(111) ordered interface produced by annealing Mn...
The electronic structure of Mn/ZnO system has been invesigated by synchrotron radiation photoemissio...
It is shown that the Mn 2p spectra of Mn atoms in Pd-Mn bimetallic surface systems formed on Pd(1 0 ...
In the present work, we address the determination of the electronic structure of a monolayer of Mn-1...
Ga1-xMnxAs, x = 0.043, has been grown ex situ on GaAs(100) by low-temperature molecular-beam epitaxy...
The surface structure and the electronic properties of the Mn:Ge(111) interface have been investigat...
We have obtained the Mn 3d partial density of states in Ga1-xMnxAs using the resonance photoemission...
The resonant photoemission spectroscopy was applied to investigate the valence band electronic struc...
The valence band structure along the Γ-T and T-W-L directions in the Brillouin zone of GeTe is studi...
The angle integrated resonant photoemission measurements of Zn0.9Mn0.1Se have been performed in the ...
The synchrotron radiation in the energy range between 15 and 70 eV wasused to investigate the electr...
Resonant Photoemission Spectroscopy was applied to investigate changes of valence band electronic st...
Resonant photoemission spectroscopy was applied to determine theMn 3d derived contribution to the va...
The valence band structure along the Γ-T and T-W-L directions in the Brillouin zone of GeTe is studi...
Mn5Ge3(001) thin films grown on Ge(111)-c(2 x 8) reconstructed surfaces were studied by angle-resolv...
The electronic and structural properties of an Mn:Ge(111) ordered interface produced by annealing Mn...
The electronic structure of Mn/ZnO system has been invesigated by synchrotron radiation photoemissio...
It is shown that the Mn 2p spectra of Mn atoms in Pd-Mn bimetallic surface systems formed on Pd(1 0 ...
In the present work, we address the determination of the electronic structure of a monolayer of Mn-1...
Ga1-xMnxAs, x = 0.043, has been grown ex situ on GaAs(100) by low-temperature molecular-beam epitaxy...
The surface structure and the electronic properties of the Mn:Ge(111) interface have been investigat...
We have obtained the Mn 3d partial density of states in Ga1-xMnxAs using the resonance photoemission...