Using a monoenergetic positron beam, annealing study of the Al/n-GaSb system was performed by monitoring the Doppler broadening of the annihilation radiation as a function of the positron implanting energy. The S-parameter against positron energy data was successfully fitted by a three-layer model (Al/interface/GaSb). The annealing out of the open volume defects in the polycrystalline Al layer was revealed by the decrease in the S-parameter and the increase in the effective diffusion length of the Al layer. For the as-deposited samples, a 5 nm interfacial region with S-parameter larger than those of the Al overlayer and the bulk was identified. After the 400ºC annealing, this interfacial region extends to over 40 nm and its S-parameter dram...
The correlation of vacancy concentration with microhardness of Fe-Al alloys was studied on samples q...
The interfacial layers between a metal overlayer and the semiconductor substrate are an integral par...
Undoped, Zn-doped and Te-doped GaSb with different concentrations were investigated by positron life...
Using a monoenergetic positron beam, annealing study of the Al/n-GaSb system was performed by monito...
Annealing study of the Al/GaSb system was performed by using a slow positron beam and the measuremen...
Using a monoenergetic positron beam, annealing study of the Al/n-GaSb system was performed by monito...
Various thicknesses of Au and Al have been evaporated onto semi-insulating GaAs(110) to form Schottk...
Gallium antimonide is an interesting material both from a material and a device point of view. Thedi...
A Doppler broadening positron annihilation technique which allows for the study of near surface defe...
A lot of light aluminium alloys achieve their favourable mechanical properties, especially their hig...
In this work, we report the impact of forming gas annealing (H2 : N2 5%:95% at 350C for 30 minutes)...
Positron annihilation spectroscopy in both conventional and coincidence Doppler broadening mode is u...
The coincidence Doppler broadening (CDB) technique is widely used to measure one-dimensional momentu...
The reaction of Au with GaSb occurs at a relatively low temperature (100 C). Upon annealing, a AuSb{...
A summary of recent positron annihilation experiments on molecular beam epitaxy (MBE) grown III-V la...
The correlation of vacancy concentration with microhardness of Fe-Al alloys was studied on samples q...
The interfacial layers between a metal overlayer and the semiconductor substrate are an integral par...
Undoped, Zn-doped and Te-doped GaSb with different concentrations were investigated by positron life...
Using a monoenergetic positron beam, annealing study of the Al/n-GaSb system was performed by monito...
Annealing study of the Al/GaSb system was performed by using a slow positron beam and the measuremen...
Using a monoenergetic positron beam, annealing study of the Al/n-GaSb system was performed by monito...
Various thicknesses of Au and Al have been evaporated onto semi-insulating GaAs(110) to form Schottk...
Gallium antimonide is an interesting material both from a material and a device point of view. Thedi...
A Doppler broadening positron annihilation technique which allows for the study of near surface defe...
A lot of light aluminium alloys achieve their favourable mechanical properties, especially their hig...
In this work, we report the impact of forming gas annealing (H2 : N2 5%:95% at 350C for 30 minutes)...
Positron annihilation spectroscopy in both conventional and coincidence Doppler broadening mode is u...
The coincidence Doppler broadening (CDB) technique is widely used to measure one-dimensional momentu...
The reaction of Au with GaSb occurs at a relatively low temperature (100 C). Upon annealing, a AuSb{...
A summary of recent positron annihilation experiments on molecular beam epitaxy (MBE) grown III-V la...
The correlation of vacancy concentration with microhardness of Fe-Al alloys was studied on samples q...
The interfacial layers between a metal overlayer and the semiconductor substrate are an integral par...
Undoped, Zn-doped and Te-doped GaSb with different concentrations were investigated by positron life...