The information about porosity in low-κ materials obtainable by depth profiling with positron annihilation spectroscopy is reviewed. In particular we focus on Doppler broadening spectroscopy and 2-3γ ratio of positronium measurements on SiOCH and amorphous carbon a-C:F:H thin films produced by plasma enhanced chemical vapour deposition
The positronium annihilation of surface modified silica gel particles was discussed. The groups of a...
[[abstract]]Two-dimensional angular correlation of positron-electron annihilation radiation and posi...
Characterization of porous silicon was performed by means of positron annihilation. Three components...
The 3-gamma annihilation of orthopositronium and the Doppler broadening of the positron annihilation...
In this paper, positron annihilation measurements have been carried out on α-Si : H thin films depos...
Positron annihilation was applied to measuring critical pore sizes in various materials. In recent y...
Depth-profiled positronium annihilation lifetime spectroscopy (PALS), as a unique, non-destructive t...
Positrounium annihilation lifetime spectroscopy (PALS) utilizing a focused low energy beam of positr...
Positronium annihilation lifetime spectroscopy is used to determine the pore-size distribution in lo...
Positronium annihilation lifetime spectroscopy (PALS) has been used to depth profile the densificati...
Positron annihilation measurements have been carried out on a-Si:H thin films deposited by plasma en...
Theme: Amorphous and microcrystalline silicon technologyIn this paper, we have carried out the posit...
We investigate nano-porous structures in thin low-dielectric films, i.e. the pore sizes, distributi...
Thin carbon films with various thicknesses, deposited on different substrates (Si and poly-ethylene-...
Thin carbon films with various thicknesses, deposited on different substrates (Si and PET) at the sa...
The positronium annihilation of surface modified silica gel particles was discussed. The groups of a...
[[abstract]]Two-dimensional angular correlation of positron-electron annihilation radiation and posi...
Characterization of porous silicon was performed by means of positron annihilation. Three components...
The 3-gamma annihilation of orthopositronium and the Doppler broadening of the positron annihilation...
In this paper, positron annihilation measurements have been carried out on α-Si : H thin films depos...
Positron annihilation was applied to measuring critical pore sizes in various materials. In recent y...
Depth-profiled positronium annihilation lifetime spectroscopy (PALS), as a unique, non-destructive t...
Positrounium annihilation lifetime spectroscopy (PALS) utilizing a focused low energy beam of positr...
Positronium annihilation lifetime spectroscopy is used to determine the pore-size distribution in lo...
Positronium annihilation lifetime spectroscopy (PALS) has been used to depth profile the densificati...
Positron annihilation measurements have been carried out on a-Si:H thin films deposited by plasma en...
Theme: Amorphous and microcrystalline silicon technologyIn this paper, we have carried out the posit...
We investigate nano-porous structures in thin low-dielectric films, i.e. the pore sizes, distributi...
Thin carbon films with various thicknesses, deposited on different substrates (Si and poly-ethylene-...
Thin carbon films with various thicknesses, deposited on different substrates (Si and PET) at the sa...
The positronium annihilation of surface modified silica gel particles was discussed. The groups of a...
[[abstract]]Two-dimensional angular correlation of positron-electron annihilation radiation and posi...
Characterization of porous silicon was performed by means of positron annihilation. Three components...