Interdigitated back contact heterojunction solar cell concept for liquid phase crystallized thin film silicon on glass

We present an interdigitated back contact silicon heterojunction system designed for liquid phase crystallized thin amp; 64257;lm 10 amp; 956;m silicon on glass. The preparation of the interdigitated emitter a Si H p and absorber a Si H n contact layers relies on the etch selectivity of doped amorphous silicon layers in alkaline solutions. The etch rates of a Si H n and a Si H p in 0.6 NaOH were determined and interdigitated back contact silicon heterojunction solar cells with two different metallizations, namely Al and ITO Ag electrodes, were evaluated regarding electrical and optical properties. An additional random pyramid texture on the back side provides short circuit current density jSC of up to 30.3 mA cm2 using the ITO Ag metallization. The maximum ef amp; 64257;ciency of 10.5 is mainly limited by a low of amp; 64257;ll factor of 57 . However, the high jSC, as well as VOC values of 633 mV and pseudo amp; 64257;ll factors of 77 , underline the high potential of this approac