Electron beam induced current measurements with applied bias provide insight tolocally resolved acceptor concentrations at p n junctions

Electron beam induced current EBIC measurements have been employed for the investigation of the local electrical properties existing at various types of electrical junctions during the past decades. In the standard configuration, the device under investigation is analyzed under short circuit conditions. Further insight into the function of the electrical junction can be obtained when applying a bias voltage. The present work gives insight into how EBIC measurements at applied bias can be conducted at the submicrometer level, at the example of CuInSe2 solar cells. From the EBIC profiles acquired across ZnO CdS CuInSe2 Mo stacks exhibiting p n junc tions with different net doping densities in the CuInSe2 layers, values for the width of the space charge region, w, were extracted. For all net doping densities, these values decreased with increasing applied voltage. Assuming a linear relationship between w2 and the applied voltage, the resulting net doping densities agreed well with the ones obtained by means of capacitance voltage measurements. C 2015 Author s . All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported Licens