Add to ORKGThe effect of Ge doping on GaSb crystallization was studied by combined in situ synchrotron techniques. It is shown that both the crystallization temperature and the electrical contrast are increased along with Ge doping. For high and medium Ge doping the mass density change upon crystallization remains negative whereas no change in mass density is measured for low Ge conten
Spatial compositional analysis has been carried out on single and polycrystal wafers of GaSb grown f...
International audienceThe influence of N concentration on the crystallization kinetics, microstructu...
To obtain a deeper understanding of the crystallization mechanism of phase change materials, a simul...
In order to optimize materials for phase change random access memories PCRAM , the effect of Ge do...
International audienceIn order to optimize materials for phase change random access memories (PCRAM)...
Combined in situ X-ray scattering techniques using synchrotron radiation were applied to investigate...
The crystallization temperature Tx of the phase change material Ge–Sb as a function of film thicknes...
International audienceGe-rich and N-doped Ge-Sb-Te thin films and patterned structures for memory ap...
To passivate Si-SiO2 dangling bonds, metal–oxide–semiconductor field-effect transistor devices are u...
The influence of the doping level on the radiative recombination properties of GaSb:Se crystals has ...
International audienceAmong the phase change materials, Ge2Sb2Te5 (GST-225) is the most studied and ...
Single crystals of Ge saturated with GaSb were prepared by temperature gradient zone melting at 750°...
Among the phase change materials, Ge2Sb2Te5 (GST-225) is the most studied and is already integrated ...
Phase-change alloys are the functional materials at the heart of an emerging digital-storage technol...
[[abstract]]This study investigated the phase change kinetics, thermal, structural, electrical prope...
Spatial compositional analysis has been carried out on single and polycrystal wafers of GaSb grown f...
International audienceThe influence of N concentration on the crystallization kinetics, microstructu...
To obtain a deeper understanding of the crystallization mechanism of phase change materials, a simul...
In order to optimize materials for phase change random access memories PCRAM , the effect of Ge do...
International audienceIn order to optimize materials for phase change random access memories (PCRAM)...
Combined in situ X-ray scattering techniques using synchrotron radiation were applied to investigate...
The crystallization temperature Tx of the phase change material Ge–Sb as a function of film thicknes...
International audienceGe-rich and N-doped Ge-Sb-Te thin films and patterned structures for memory ap...
To passivate Si-SiO2 dangling bonds, metal–oxide–semiconductor field-effect transistor devices are u...
The influence of the doping level on the radiative recombination properties of GaSb:Se crystals has ...
International audienceAmong the phase change materials, Ge2Sb2Te5 (GST-225) is the most studied and ...
Single crystals of Ge saturated with GaSb were prepared by temperature gradient zone melting at 750°...
Among the phase change materials, Ge2Sb2Te5 (GST-225) is the most studied and is already integrated ...
Phase-change alloys are the functional materials at the heart of an emerging digital-storage technol...
[[abstract]]This study investigated the phase change kinetics, thermal, structural, electrical prope...
Spatial compositional analysis has been carried out on single and polycrystal wafers of GaSb grown f...
International audienceThe influence of N concentration on the crystallization kinetics, microstructu...
To obtain a deeper understanding of the crystallization mechanism of phase change materials, a simul...