Abstract The interface formation between epitaxial CuInSe2 112 films and ZnO deposited by metal organic MBE is investigated by photoelectron spectroscopy. Reaction of diethyl zinc with CuInSe2 leads to the formation of an intrinsic ZnSe layer and copper depletion of the interface. This is associated with Zn doping of the chalcopyrite surface and a Fermi level shift towards the conduction band. The implications on the band alignment are discussed
Energy band alignments at heterointerfaces play a crucial role in defining the functionality of semi...
The interface formation between vacuum evaporated CdS and ultrahigh vacuum-cleaved CuInS₂ single cr...
Thin-film solar cells based on Cu(In,Ga)Se2 contain a thin buffer layer of CdS in their standard con...
Abstract The interface formation between epitaxial CuInSe2 112 films and ZnO deposited by metal or...
We report on epitaxial growth of ZnO on polycrystalline and 112 orientated CuInS2 and CuInSe2 thi...
Copper indium disulfide CuInS2 grown under Cu rich conditions exhibits high optical quality but su...
The interface formation and band lineup between ZnO and epitaxial CuInSe2 substrates is investigate...
The energy band alignment at interfaces between Cu-chalcopyrites and Zn(O,S) buffer layers, which ar...
Interfaces of epitaxial CuInSe2 112 surfaces to ZnO have been prepared by ALD Atomic Layer Deposi...
The formation of the ZnSe/CuGaSe₂ heterointerface was studied by x-ray photoelectron spectroscopy (X...
The electronic and chemical properties of the Zn1 x,Mgx O CuIn S,Se 2 interface, prepared by sputt...
The chemical and electronic structure of the interface between a sputter-deposited Zn(O,S) buffer la...
Cu2ZnSnSe4 (CZTSe) is one of the leading candidates for the absorber layer in sustainable solar cell...
Zn incorporation into CuInS2 absorbers is found to increase the open circuit voltage but to decreas...
AbstractSpectral dependent charge transfer and exciton dissociation have been investigated at hybrid...
Energy band alignments at heterointerfaces play a crucial role in defining the functionality of semi...
The interface formation between vacuum evaporated CdS and ultrahigh vacuum-cleaved CuInS₂ single cr...
Thin-film solar cells based on Cu(In,Ga)Se2 contain a thin buffer layer of CdS in their standard con...
Abstract The interface formation between epitaxial CuInSe2 112 films and ZnO deposited by metal or...
We report on epitaxial growth of ZnO on polycrystalline and 112 orientated CuInS2 and CuInSe2 thi...
Copper indium disulfide CuInS2 grown under Cu rich conditions exhibits high optical quality but su...
The interface formation and band lineup between ZnO and epitaxial CuInSe2 substrates is investigate...
The energy band alignment at interfaces between Cu-chalcopyrites and Zn(O,S) buffer layers, which ar...
Interfaces of epitaxial CuInSe2 112 surfaces to ZnO have been prepared by ALD Atomic Layer Deposi...
The formation of the ZnSe/CuGaSe₂ heterointerface was studied by x-ray photoelectron spectroscopy (X...
The electronic and chemical properties of the Zn1 x,Mgx O CuIn S,Se 2 interface, prepared by sputt...
The chemical and electronic structure of the interface between a sputter-deposited Zn(O,S) buffer la...
Cu2ZnSnSe4 (CZTSe) is one of the leading candidates for the absorber layer in sustainable solar cell...
Zn incorporation into CuInS2 absorbers is found to increase the open circuit voltage but to decreas...
AbstractSpectral dependent charge transfer and exciton dissociation have been investigated at hybrid...
Energy band alignments at heterointerfaces play a crucial role in defining the functionality of semi...
The interface formation between vacuum evaporated CdS and ultrahigh vacuum-cleaved CuInS₂ single cr...
Thin-film solar cells based on Cu(In,Ga)Se2 contain a thin buffer layer of CdS in their standard con...