Results of investigations of kinetic properties of TiN thin films prepared by dc reactive magnetron sputtering are presented. It is established that the TiN thin films are polycrystalline and possess semiconduc tor n type conduction. The carrier concentration is 1022 cm 3, while electron scattering occurs at ionized titanium atom
The present paper reports the influence of growth conditions on the properties of TiN thin films dep...
The effect of substrate orientation and ion bombardment during the growth on the structure and prope...
Polished samples of low carbon steel (LCS) rod cross-sections were sputtered with different thicknes...
Results of investigations of kinetic properties of TiN thin films prepared by dc reactive magnetron ...
Results of investigations of kinetic properties of TiN thin films prepared by dc reactive magnetron ...
259-259A use of the four-probe resistance measurements as a tool for characterization of a quality o...
Thin nanocrystalline Titanium nitride (TiN) films were deposited on mild steel (MS) substrates usin...
Ti/TiN multilayers were deposited by DC reactive magnetron sputtering method using a titanium target...
A use of the four-probe resistance measurements as a tool for characterization of a quality of titan...
This paper reports on the characterization of films of titanium nitride (TiN) obtained by reactive s...
The effects of processing parameters on stoichiometry and microstructure of reactively sputtered TiN...
The effects of processing parameters on stoichiometry and microstructure of reactively sputtered TiN...
© Published under licence by IOP Publishing Ltd. Reactive dc magnetron sputtering was employed to pr...
Deposition of thin film using plasma sputtering system had been widely discovered and developed exte...
The present paper reports the influence of growth conditions on the properties of TiN thin films dep...
The present paper reports the influence of growth conditions on the properties of TiN thin films dep...
The effect of substrate orientation and ion bombardment during the growth on the structure and prope...
Polished samples of low carbon steel (LCS) rod cross-sections were sputtered with different thicknes...
Results of investigations of kinetic properties of TiN thin films prepared by dc reactive magnetron ...
Results of investigations of kinetic properties of TiN thin films prepared by dc reactive magnetron ...
259-259A use of the four-probe resistance measurements as a tool for characterization of a quality o...
Thin nanocrystalline Titanium nitride (TiN) films were deposited on mild steel (MS) substrates usin...
Ti/TiN multilayers were deposited by DC reactive magnetron sputtering method using a titanium target...
A use of the four-probe resistance measurements as a tool for characterization of a quality of titan...
This paper reports on the characterization of films of titanium nitride (TiN) obtained by reactive s...
The effects of processing parameters on stoichiometry and microstructure of reactively sputtered TiN...
The effects of processing parameters on stoichiometry and microstructure of reactively sputtered TiN...
© Published under licence by IOP Publishing Ltd. Reactive dc magnetron sputtering was employed to pr...
Deposition of thin film using plasma sputtering system had been widely discovered and developed exte...
The present paper reports the influence of growth conditions on the properties of TiN thin films dep...
The present paper reports the influence of growth conditions on the properties of TiN thin films dep...
The effect of substrate orientation and ion bombardment during the growth on the structure and prope...
Polished samples of low carbon steel (LCS) rod cross-sections were sputtered with different thicknes...
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