Study of surface passivation of crystalline silicon with amorphous silicon carbide deposited by plasma enhanced chemical vapor deposition

Electrical passivation induced by a silicon carbide coating deposited on mono crystalline silicon substrate was investigated by means of photo conductivity measurements. Roles of the fixed charges and surface defects were compared with silicon nitride coating. The passivation mechanisms were found to be the same as for silicon nitride but a smaller number of fixed charges in the range of the silicon oxide was calculate