Discerning passivation mechanisms at a Si H c Si interfaces by means of photoconductance measurements

The photoconductance decay PCD measurement is a fast and simple method to characterize amorphous crystalline a Si H c Si silicon interfaces for high efficiency solar cells. However, PCD only yields information concerning the overall recombination rate in the structure. To overcome this limitation, we have developed and validated a computer aided PCD CA PCD analysis method to determine the defect density of recombination active dangling bonds at the interface and the potential drop in the crystalline absorber adjacent to the interface. As a practical example, we investigate a Si H p a Si H i c Si n layer stacks and show that the CA PCD method is capable of discerning the influence of field effect and defect passivatio