A recombination model for a Si H c Si heterostructures

A semi analytical model to describe the excess carrierconcentration dependent recombination processes andthe charge carrier lifetime in a Si H c Si heterostructureshas been developed. In contrast to previously proposedmodels it accounts for most relevant physical processes In addition to bulk recombination processes the recombinationvia distributed dangling bond defects at the interfaceis integrated. Furthermore interface band bendingdepending on the a Si H doping and the Fermi level dependentdefect charge is taken into consideration as wellas charge carrier diffusion to the interface. Despitecomplexity the model allows for rapid computation andis thus well suited for fitting lifetime measurementsorder to extract interface parameters. The model is crosscheckedfor various experimentally relevant situationsagainst the numerical simulation tool AFORS HE