We analyze the dependence of the interface defect density Dit in amorphous crystalline silicon a Si H c Si heterojunctions on the microscopic properties of ultrathin 10 nm undoped a Si H passivation layers. It is shown that the hydrogen bonding and network disorder, probed by infrared and photoelectron spectroscopy, govern the initial Dit and its behavior upon a short thermal treatment at 200 C. While the initial Dit is determined by the local and nonequilibrated interface structure, the annealed Dit is defined by the bulk a Si H network strain. Thus it appears that the equilibrated a Si H c Si interface does not possess unique electronic properties but is governed by the a Si H bulk defect
LGEP 2013 ID = 1419International audienceThe photostability of the amorphous--crystalline silicon he...
The photovoltaic characteristics of amorphous/crystalline silicon hetero-junction solar cells are st...
In this paper we present the results of empirical potential and density functional theory (DFT) stud...
We analyze the dependence of the interface defect density Dit in amorphous crystalline a Si H c Si...
Ultrathin layers of hydrogenated amorphous silicon (a-Si:H), passivating the surface of crystalline ...
The most attracting way to fabricate high efficiency solar cells is the amorphous/crystalline silico...
We determine the band offsets in amorphous crystalline silicon [a Si H c Si 111 ] heterojunctions us...
We explore the near interface structure of amorphous crystalline silicon a Si H c Si heterojun...
Hydrogen plays a critical role in the passivation of dangling bonds in hydrogenated amorphous silico...
Abstract. Defects in disordered (amorphous) semiconductors are discussed, with an emphasis on hydrog...
We present the first report of the interface state density distribution in undoped hydrogenated amor...
The amorphous/crystalline silicon technology has demonstrated its potentiality leading to high effic...
We present postdeposition annealing experiments on undoped amorphous n type crystalline silicon [ i...
Intrinsic hydrogenated amorphous silicon (a-Si:H) films can yield in outstanding electronic surface ...
The mechanism determining the band alignment of amorphous/crystalline Si heterostructures is address...
LGEP 2013 ID = 1419International audienceThe photostability of the amorphous--crystalline silicon he...
The photovoltaic characteristics of amorphous/crystalline silicon hetero-junction solar cells are st...
In this paper we present the results of empirical potential and density functional theory (DFT) stud...
We analyze the dependence of the interface defect density Dit in amorphous crystalline a Si H c Si...
Ultrathin layers of hydrogenated amorphous silicon (a-Si:H), passivating the surface of crystalline ...
The most attracting way to fabricate high efficiency solar cells is the amorphous/crystalline silico...
We determine the band offsets in amorphous crystalline silicon [a Si H c Si 111 ] heterojunctions us...
We explore the near interface structure of amorphous crystalline silicon a Si H c Si heterojun...
Hydrogen plays a critical role in the passivation of dangling bonds in hydrogenated amorphous silico...
Abstract. Defects in disordered (amorphous) semiconductors are discussed, with an emphasis on hydrog...
We present the first report of the interface state density distribution in undoped hydrogenated amor...
The amorphous/crystalline silicon technology has demonstrated its potentiality leading to high effic...
We present postdeposition annealing experiments on undoped amorphous n type crystalline silicon [ i...
Intrinsic hydrogenated amorphous silicon (a-Si:H) films can yield in outstanding electronic surface ...
The mechanism determining the band alignment of amorphous/crystalline Si heterostructures is address...
LGEP 2013 ID = 1419International audienceThe photostability of the amorphous--crystalline silicon he...
The photovoltaic characteristics of amorphous/crystalline silicon hetero-junction solar cells are st...
In this paper we present the results of empirical potential and density functional theory (DFT) stud...