Chemical and electronic surface structure of 20 efficient Cu In,Ga Se2 thin film solar cell absorbers

The chemical and electronic surface structure of 20 efficient Cu In,Ga Se2 thin film solar cell absorbers was investigated as a function of deposition process termination i.e., ending the growth process in absence of either Ga or In . In addition to the expected In Ga enrichment, direct and inverse photoemission reveal a decreased Cu surface content and a larger surface band gap for the In terminated absorbe