Contactless measurements of the photoconductance for the electrical characterization of silicon are discussed. The different techniques are presented and discussed. The theory for the interpretation of the measurements is given. At the hand of some exemplary experiments it is shown which information can be obtained from these measurement
Experimental results for a new method of measuring the minority carrier lifetime as a process contro...
Following an optical excitation of the free carriers in silicon wafers, their lifetimes are determin...
Measuring the excess charge carrier density is a widespread approach to accessing the charge carrier...
Recombination lifetime and diffusion length measured with the photoconductance d cay and surface pho...
Accurate measurements of the injection-dependent excess carrier lifetime of silicon samples are esse...
We present an experimental approach to determine the charge carrier lifetime in silicon based on the...
AbstractA reliable material characterization in an early stage of fabrication is essential for furth...
Measurement techniques which rely on the exact knowledge of the actual generation rate within a sili...
In this contribution, a method to determine the excess carrier lifetime epi in the electrically acti...
The application of photoconductance measurements to investigate the electronic properties of multicr...
Carrier lifetime measurements from photoconductivity (with constant current and constant voltage pol...
Measurements of effective lifetimes on epitaxial silicon thin-film material have been carried out. T...
The time correlated single photon counting (TCSPC) technique offers a high sensitivity to low light ...
Quasi-steady-state photoluminescence is a versatile technique to determine carrier lifetime in silic...
Abstract—In this paper, we present a new method to determine the simultaneous injection and temperat...
Experimental results for a new method of measuring the minority carrier lifetime as a process contro...
Following an optical excitation of the free carriers in silicon wafers, their lifetimes are determin...
Measuring the excess charge carrier density is a widespread approach to accessing the charge carrier...
Recombination lifetime and diffusion length measured with the photoconductance d cay and surface pho...
Accurate measurements of the injection-dependent excess carrier lifetime of silicon samples are esse...
We present an experimental approach to determine the charge carrier lifetime in silicon based on the...
AbstractA reliable material characterization in an early stage of fabrication is essential for furth...
Measurement techniques which rely on the exact knowledge of the actual generation rate within a sili...
In this contribution, a method to determine the excess carrier lifetime epi in the electrically acti...
The application of photoconductance measurements to investigate the electronic properties of multicr...
Carrier lifetime measurements from photoconductivity (with constant current and constant voltage pol...
Measurements of effective lifetimes on epitaxial silicon thin-film material have been carried out. T...
The time correlated single photon counting (TCSPC) technique offers a high sensitivity to low light ...
Quasi-steady-state photoluminescence is a versatile technique to determine carrier lifetime in silic...
Abstract—In this paper, we present a new method to determine the simultaneous injection and temperat...
Experimental results for a new method of measuring the minority carrier lifetime as a process contro...
Following an optical excitation of the free carriers in silicon wafers, their lifetimes are determin...
Measuring the excess charge carrier density is a widespread approach to accessing the charge carrier...