The epitaxial growth of sputtered silicon layers on differently oriented substrates at low temperature An electron microscopic stud
The epitaxial growth of CeO_2(100) films on(100) silicon substrates by dual ion beams sputtering has...
Mechanisms governing the aluminum-mediated solid-phase epitaxy of Si on patterned crystalline Si sub...
Structure of thin films usually requires to be examined on microscopic level. The research topics li...
International audienceTransmission electron microscopy techniques to better understand growth mechan...
We have examined the selective growth of silicon on (1 0 0) oriented, oxidized silicon substrates co...
In this paper we report on homoepitaxial growth of Si thin films at substrate temperatures Ts 500 65...
The low temperature homoepitaxial growth of silicon has been probed in situ by Reflection High Energ...
The effect of substrate orientation on the quality of silicon epitaxial ayers was studied in terms o...
Low-temperature (<= 200 degrees C) epitaxial growth yields precise thickness, doping, and thermal-bu...
silicon epitaxy etched using the etch-through technique. Applications These etching techniques have ...
Epitaxial crystal growth using an energy- and mass-analysed ion beam can provide insights into the f...
The low temperature homoepitaxial growth of silicon has been probed in situ by Reflection High Energ...
Abstract The structure and morphology of epitaxial layer defects in epitaxial Si wafers produced by ...
The purpose of this thesis is to study the effect of conditions such as substrate orientation, proce...
The work described in this thesis is concerned with the growth and examination of thin Si and Ge fil...
The epitaxial growth of CeO_2(100) films on(100) silicon substrates by dual ion beams sputtering has...
Mechanisms governing the aluminum-mediated solid-phase epitaxy of Si on patterned crystalline Si sub...
Structure of thin films usually requires to be examined on microscopic level. The research topics li...
International audienceTransmission electron microscopy techniques to better understand growth mechan...
We have examined the selective growth of silicon on (1 0 0) oriented, oxidized silicon substrates co...
In this paper we report on homoepitaxial growth of Si thin films at substrate temperatures Ts 500 65...
The low temperature homoepitaxial growth of silicon has been probed in situ by Reflection High Energ...
The effect of substrate orientation on the quality of silicon epitaxial ayers was studied in terms o...
Low-temperature (<= 200 degrees C) epitaxial growth yields precise thickness, doping, and thermal-bu...
silicon epitaxy etched using the etch-through technique. Applications These etching techniques have ...
Epitaxial crystal growth using an energy- and mass-analysed ion beam can provide insights into the f...
The low temperature homoepitaxial growth of silicon has been probed in situ by Reflection High Energ...
Abstract The structure and morphology of epitaxial layer defects in epitaxial Si wafers produced by ...
The purpose of this thesis is to study the effect of conditions such as substrate orientation, proce...
The work described in this thesis is concerned with the growth and examination of thin Si and Ge fil...
The epitaxial growth of CeO_2(100) films on(100) silicon substrates by dual ion beams sputtering has...
Mechanisms governing the aluminum-mediated solid-phase epitaxy of Si on patterned crystalline Si sub...
Structure of thin films usually requires to be examined on microscopic level. The research topics li...
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