Investigations of the main parameters of the ion photon emission during the Ar ions bombardment of the complex oxides MgO nAl2O3 were provided. Spectral composition of the emitted light, relative intensities of different lines, and dependences of lines intensity on the distance from the target surface give information on process of sputtering of the particles and their formation in different exited states. It was shown that under the bombardment with Ar ions the excited atoms of metal Al and Mg are formed as in the process of multiple collisions so under the development of linear cascades. Formation of the excited sputtered ions Mg takes place only during the process of multiple collisions. For deeply situated levels an essential...
The electronic mechanisms leading to the formation of excited atoms from ion-bombarded metal surface...
A brief review is given of recent progress toward a quantitative understanding of negative ion forma...
The spectral structure of the radiation (250–500 nm) emitted during sputtering of clean an...
We demonstrate that the presence of excited states in sputtered surface atoms after ion bombardment ...
The aim of this work was to study the process of reactive ion-beam sputtering of gallium arsenide us...
The ion flux obtained during reactive magnetron sputtering of an Al target in Ar/O2 gas mixtures was...
Laser ablation of transition-metal oxides have been investigated to better understand the formation ...
A model is presented for the formation of excited Ag-* (4d(9)5s(2)) atoms during sputtering of Ag me...
The energy distributions of sputtered atoms and ions produced by few hundred to few thousand eV ion ...
In the present work an effect of excitation of the metal electronic subsystem on the ionisation prob...
Abstract. Mass spectroscopic studies of the neutral particles puttered by Ar + ions at 8 keV from po...
Visible, ultraviolet, and infrared optical emission results from low- energy (20 eV-10 keV) particle...
We describe a new tandem mass spectrometer which has been designed to investigate sputtering phenome...
The plasma parameters and reaction kinetics in an inverted cylindrical magnetron chamber have been s...
The investigation is concerned with multiple scattering and canalization of medium- and low-energy i...
The electronic mechanisms leading to the formation of excited atoms from ion-bombarded metal surface...
A brief review is given of recent progress toward a quantitative understanding of negative ion forma...
The spectral structure of the radiation (250–500 nm) emitted during sputtering of clean an...
We demonstrate that the presence of excited states in sputtered surface atoms after ion bombardment ...
The aim of this work was to study the process of reactive ion-beam sputtering of gallium arsenide us...
The ion flux obtained during reactive magnetron sputtering of an Al target in Ar/O2 gas mixtures was...
Laser ablation of transition-metal oxides have been investigated to better understand the formation ...
A model is presented for the formation of excited Ag-* (4d(9)5s(2)) atoms during sputtering of Ag me...
The energy distributions of sputtered atoms and ions produced by few hundred to few thousand eV ion ...
In the present work an effect of excitation of the metal electronic subsystem on the ionisation prob...
Abstract. Mass spectroscopic studies of the neutral particles puttered by Ar + ions at 8 keV from po...
Visible, ultraviolet, and infrared optical emission results from low- energy (20 eV-10 keV) particle...
We describe a new tandem mass spectrometer which has been designed to investigate sputtering phenome...
The plasma parameters and reaction kinetics in an inverted cylindrical magnetron chamber have been s...
The investigation is concerned with multiple scattering and canalization of medium- and low-energy i...
The electronic mechanisms leading to the formation of excited atoms from ion-bombarded metal surface...
A brief review is given of recent progress toward a quantitative understanding of negative ion forma...
The spectral structure of the radiation (250–500 nm) emitted during sputtering of clean an...