Optimization of interface properties in a Si H c Si heterojunction solar cells

We report on the optimization of hydrogenated amorphous silicon crystalline silicon a Si H c Si heterojunction solar cells which were completely processed at temperatures below 230 C. Efficient solar cells based on both n type and on p type c Si substrates were performed. In contrast to the approach from Sanyo [1] no additional a Si H i buffer layer was used. Instead the conditions of the amorphous silicon preparation by conventional plasma enhanced chemical vapor deposition PECVD were optimized and several wet or plasma chemical treatments were applied to improve the interface properties. The highest efficiencies so far are 17.4 on p type c Si wafers and 19.8 on n type c Si wafers