Formation of the physical vapor deposited CdS Cu In,Ga Se2 interface in highly efficient thin film solar cells

We report on the buffer absorber interface formation in highly efficient 14.5 , AM1.5 ZnO CdS Cu In,Ga Se2 solar cells with a physical vapor deposited CdS buffer. For Se decapped Cu In,Ga Se2 CIGSe absorbers we observe sulfur passivation of the CIGSe grain boundaries during CdS growth and at the interface a thermally stimulated formation of a region with a higher band gap than that of the absorber bulk, determining the height of the potential barrier at the CdS CIGSe interface. For air exposed CIGSe samples the grain boundary passivation is impeded by a native oxide adsorbate layer at the CIGSe surface determining the thermal stability of the potential barrier heigh