The Fourier transform infrared spectrum of the MOCVD grown smetalorganic chemical vapor depositiond P rich ordered InP 001 surface was measured in ultrahigh vacuum applying attenuated total reflection. The surface was measured without carrying out any post transfer surface preparation. The low energy electron defraction pattern showed the well known 2x1 structure with streaks in the [ 110] direction. After exposure to activated deuterium, the different infrared spectrum revealed a pronounced peak at 2308 cm 1, which was ascribed to P H bonds. Polarization dependent spectra showed the dipole moments of the P H bonds oriented only in f001g and [ 110] directions. A weak 0.8 cm 1 splitting was measured between the symmetric and antisy...
We studied the atomic surface properties of Si 100 during preparation in a metal organic vapour pha...
The atomic structure of gallium arsenide and indium phosphide (001) surfaces in the metalorganic che...
Indium phosphide (InP) is a member of a group of compounds known as III-V semiconductors. InP's dire...
Metalorganic vapor phase epitaxy grown InP samples capped with a protective As/P double layer were u...
The formation of hydrogen bonds was investigated on the P rich InP 001 surface employing attenuated...
The authors investigated Si 100 surfaces prepared by vapor phase epitaxy VPE using Fourier transf...
Die Adsorption von Wasserstoff auf Indiumphosphid (100)-Oberflächen wurde mittels Fourier-Transform ...
[[abstract]]We have studied the optical anisotropy induced by the (0 0 1) surface reconstruction of ...
Reflection anisotropy spectroscopy (RAS) and reflection high-energy electron diffraction (RHEED) wer...
The HREEL spectrum of InP(110) in the quasi-elastic peak region is strongly modified by the exposure...
Ge 100 substrates essential for subsequent III V integration were studied in the hydrogen ambient o...
Dynamical formation mechanism of defects in the annealed nominally undoped semi-insulating InP obtai...
In the present work HCl-isopropanol treated and vacuum annealed InP(001) surfaces were studied by me...
In the present work HCl-isopropanol treated and vacuum annealed InP(001) surfaces were studied by me...
Local vibrational modes(LVMs) in tenths of InP samples reveal clearly existence of complexes related...
We studied the atomic surface properties of Si 100 during preparation in a metal organic vapour pha...
The atomic structure of gallium arsenide and indium phosphide (001) surfaces in the metalorganic che...
Indium phosphide (InP) is a member of a group of compounds known as III-V semiconductors. InP's dire...
Metalorganic vapor phase epitaxy grown InP samples capped with a protective As/P double layer were u...
The formation of hydrogen bonds was investigated on the P rich InP 001 surface employing attenuated...
The authors investigated Si 100 surfaces prepared by vapor phase epitaxy VPE using Fourier transf...
Die Adsorption von Wasserstoff auf Indiumphosphid (100)-Oberflächen wurde mittels Fourier-Transform ...
[[abstract]]We have studied the optical anisotropy induced by the (0 0 1) surface reconstruction of ...
Reflection anisotropy spectroscopy (RAS) and reflection high-energy electron diffraction (RHEED) wer...
The HREEL spectrum of InP(110) in the quasi-elastic peak region is strongly modified by the exposure...
Ge 100 substrates essential for subsequent III V integration were studied in the hydrogen ambient o...
Dynamical formation mechanism of defects in the annealed nominally undoped semi-insulating InP obtai...
In the present work HCl-isopropanol treated and vacuum annealed InP(001) surfaces were studied by me...
In the present work HCl-isopropanol treated and vacuum annealed InP(001) surfaces were studied by me...
Local vibrational modes(LVMs) in tenths of InP samples reveal clearly existence of complexes related...
We studied the atomic surface properties of Si 100 during preparation in a metal organic vapour pha...
The atomic structure of gallium arsenide and indium phosphide (001) surfaces in the metalorganic che...
Indium phosphide (InP) is a member of a group of compounds known as III-V semiconductors. InP's dire...