Structural defects and photoluminescence of epitaxial Si films grown at low temperatures
- Petter K.
- Sieber I.
- Rau B.
- Brehme S.
- Lips K.
- Fuhs W.
DOIAbstract
Structural defects and photoluminescence of epitaxial Si films grown at low temperature
Structural defects and photoluminescence of epitaxial Si films grown at low temperature
AbstractThis paper presents the results of thin film silicon (Si) solar cells with in-situ doped epi...
none7Hydrogenated nanocrystalline silicon (nc-Si:H) is a very promising material for photovoltaic ap...
We explore the growth of low-temperature bulk-like Si(100) homoepitaxy with regard to microscopic su...
Photoluminescence Study of Low Thermal Budget III-V Nanostructures on Silicon by Droplet Epitax
The introduction of optically active defects (such as atomic clusters, dislocations, precipitates) i...
In this paper, structural and electrical properties of thin p type Si films which are homoepitaxiall...
We investigate the role of disorder, stress and crystallite size in determining the density of defec...
Si(100) films were doped with 100, 200, 500, and 1000 eV $\sp{11}$B$\sp+$ and $\sp{75}$As$\sp+$ ions...
We studied the dependence of photoluminescence induced by carbon contamination on the Ge/GeSi struct...
SIGLEAvailable from British Library Document Supply Centre-DSC:DXN030504 / BLDSC - British Library D...
SIGLEAvailable from British Library Document Supply Centre- DSC:DX94101 / BLDSC - British Library Do...
We present a structural and chemical analysis of high-vacuum deposited Si filmsgrown on clean or oxi...
original title in MBE 2012 : "Structural and optical studies of GaP/Si induced defects in GaAsPN qua...
Measurements executed at 300 K revealed photoluminescence solely from silicon. However, at 93 K the ...
A nanoscale layer of amorphized silicon is obtained by implantations with silicon ions through a P-d...
AbstractThis paper presents the results of thin film silicon (Si) solar cells with in-situ doped epi...
none7Hydrogenated nanocrystalline silicon (nc-Si:H) is a very promising material for photovoltaic ap...
We explore the growth of low-temperature bulk-like Si(100) homoepitaxy with regard to microscopic su...
Photoluminescence Study of Low Thermal Budget III-V Nanostructures on Silicon by Droplet Epitax
The introduction of optically active defects (such as atomic clusters, dislocations, precipitates) i...
In this paper, structural and electrical properties of thin p type Si films which are homoepitaxiall...
We investigate the role of disorder, stress and crystallite size in determining the density of defec...
Si(100) films were doped with 100, 200, 500, and 1000 eV $\sp{11}$B$\sp+$ and $\sp{75}$As$\sp+$ ions...
We studied the dependence of photoluminescence induced by carbon contamination on the Ge/GeSi struct...
SIGLEAvailable from British Library Document Supply Centre-DSC:DXN030504 / BLDSC - British Library D...
SIGLEAvailable from British Library Document Supply Centre- DSC:DX94101 / BLDSC - British Library Do...
We present a structural and chemical analysis of high-vacuum deposited Si filmsgrown on clean or oxi...
original title in MBE 2012 : "Structural and optical studies of GaP/Si induced defects in GaAsPN qua...
Measurements executed at 300 K revealed photoluminescence solely from silicon. However, at 93 K the ...
A nanoscale layer of amorphized silicon is obtained by implantations with silicon ions through a P-d...
AbstractThis paper presents the results of thin film silicon (Si) solar cells with in-situ doped epi...
none7Hydrogenated nanocrystalline silicon (nc-Si:H) is a very promising material for photovoltaic ap...
We explore the growth of low-temperature bulk-like Si(100) homoepitaxy with regard to microscopic su...
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