Add to ORKGLow Temperature Si Epitaxy Absorber Layers Grown by Electron Cyclotron Resonance Chemical Vapor Depositio
Low-temperature (<= 200 degrees C) epitaxial growth yields precise thickness, doping, and thermal-bu...
Structural defects and photoluminescence of epitaxial Si films grown at low temperature
We investigated the growth of in-situ n-type doped epitaxial Si layers with arsenic and phosphorus b...
The epitaxial thickening of polycrystalline Si films on glass substrates is of great interest for th...
[[abstract]]Electron cyclotron resonance chemical vapor deposition has resulted in poly-Si films wit...
The epitaxial thickening of polycrystalline Si films on glass substrates is of great interest for th...
This work reports on the improvement made during low temperature amp; 8804;550 C epitaxial growth...
The epitaxial thickening of a thin polycrystalline Si poly Si film seed layer is a promising app...
The authors report on the first known growth of high-quality epitaxial Si via the hot wire chemical ...
The seed layer concept is an attractive approach towards a polycrystalline Si poly Si thin film so...
A rapid thermal chemical vapour deposition system has been used for the growth of epitaxial silicon ...
The epitaxial growth of sputtered silicon layers on differently oriented substrates at low temperatu...
By using low-energy electron-cyclotron-resonance (ECR) Ar plasma chemical vapor deposition (CVD), he...
The deposition of epitaxial silicon films at temperatures from 600~176 by both very low-pressure che...
Device scaling and novel device architectures continue to drive the evolution of silicon epitaxial p...
Low-temperature (<= 200 degrees C) epitaxial growth yields precise thickness, doping, and thermal-bu...
Structural defects and photoluminescence of epitaxial Si films grown at low temperature
We investigated the growth of in-situ n-type doped epitaxial Si layers with arsenic and phosphorus b...
The epitaxial thickening of polycrystalline Si films on glass substrates is of great interest for th...
[[abstract]]Electron cyclotron resonance chemical vapor deposition has resulted in poly-Si films wit...
The epitaxial thickening of polycrystalline Si films on glass substrates is of great interest for th...
This work reports on the improvement made during low temperature amp; 8804;550 C epitaxial growth...
The epitaxial thickening of a thin polycrystalline Si poly Si film seed layer is a promising app...
The authors report on the first known growth of high-quality epitaxial Si via the hot wire chemical ...
The seed layer concept is an attractive approach towards a polycrystalline Si poly Si thin film so...
A rapid thermal chemical vapour deposition system has been used for the growth of epitaxial silicon ...
The epitaxial growth of sputtered silicon layers on differently oriented substrates at low temperatu...
By using low-energy electron-cyclotron-resonance (ECR) Ar plasma chemical vapor deposition (CVD), he...
The deposition of epitaxial silicon films at temperatures from 600~176 by both very low-pressure che...
Device scaling and novel device architectures continue to drive the evolution of silicon epitaxial p...
Low-temperature (<= 200 degrees C) epitaxial growth yields precise thickness, doping, and thermal-bu...
Structural defects and photoluminescence of epitaxial Si films grown at low temperature
We investigated the growth of in-situ n-type doped epitaxial Si layers with arsenic and phosphorus b...